Flash memory structure, memory array, and programming, erasing, and reading method of flash memory structure and memory array

Abstract

The invention discloses a flash memory structure, a memory array, and a programming, erasing, and reading method of the flash memory structure and the memory array. The flash memory structure comprises a semiconductor substrate, a bit line structure, a word line structure, a floating gate structure, and a control gate structure; the inner part of the semiconductor substrate is provided with a doping trap, and a source electrode and a drain electrode are formed by the doping trap; the bit line structure comprises a bit line structure 1 and a bit line structure 2 which are connected with the drain electrode and the source electrode respectively; the word line structure is arranged between the bit line structure 1 and the bit line structure 2; the floating gate structure comprises a floating gate structure 1 and a floating gate structure 2 which are arranged between the word line structure and the bit line structure respectively; the control gate structure comprises a control gate structure 1 and a control gate structure 2 which are arranged on the surface of the floating gate structure respectively; and the bit line structure, the word line structure, and the floating gate structure are all arranged on the surface of the semiconductor substrate. The flash memory structure is capable of reducing memory area, and increasing memory programming speed.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a flash memory structure, a memory array and programming, erasing and reading methods thereof. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (flash memory, Electrically Erasable Programmable Read-Only Memory) is a semiconductor storage device with byte (Byte) as the minimum modification unit, which can be electronically rewritten multiple times. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), flash memory does not need to be irradiated with ultraviolet rays or removed, and a specific voltage can be used to erase the information on the chip for writing. Enter new data. Due to the excellent performance of flash memory and the convenience of online operation, it is widely used in BIOS chips and flash memory chips that need to be frequently erased, and gradually replaces some random access memor...

AI Technical Summary

Problems solved by technology

[0004] The existing technology usually only uses one row of memory cells connected to the same source line to store data, which leads to low utilization of memory cells, and too many idle memory cells occupy a large space, making the memory area composed of memory cells larger , and the programming speed is slow

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