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Vapor phase film deposition apparatus

A gas-phase film-forming and film-forming technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as difficulties, achieve high-quality film formation, and increase the partial pressure of material gas

Active Publication Date: 2015-04-15
HERMES EPITEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] Based on the above studies, it is difficult for conventional devices to maintain the actual material gas flow rate while satisfying the three elements of high volatile element partial pressure, fast flow rate and gentle film formation velocity distribution, especially in the volume It is not too much to say that in the large installations used in production

Method used

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Examples

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Embodiment 1

[0097] The film-forming speed curve of embodiment 1 gallium nitride film

[0098]Next, an example in which the present invention is applied to the formation of a gallium nitride film and compared with conventional methods will be described. First, an example about a conventional method performed for comparison will be described. In previous examples, using a Figure 10 The cross-sectional structure of the reactor. In this device, optimization experiments were carried out from the viewpoints of film formation quality, raw material utilization efficiency, carrier gas consumption, and flow rate. The optimum film formation pressure was 25kPa, the channel height was 14mm, and the carrier gas flow rate was 120SLM. On the other hand, the present invention is constructed using a figure 1 and figure 2 The rectangular cross-sectional shape is shown, and the opposite surface with 12 flow channels is divided. The opening angles of the concave portion 34 and the convex portion 36 are...

Embodiment 2

[0105] Embodiment 2 Luminescent properties of multiple quantum wells

[0106] Next, InGaN / GaN multiple quantum wells were fabricated using the conventional and the present invention devices of Example 1, and were evaluated by the spectrum of photoluminescence. The respective film-forming conditions are described in Table 2 below.

[0107] Table 2

[0108]

[0109] Under these film-forming conditions, a 4-inch substrate was used, and the film was formed by rotating the substrate on its own axis at 5 rpm in revolution and 15 rpm in rotation. Figure 9 is the spectrum of the resulting photoluminescence of the multiple quantum well. It can be seen from the figure that the peak intensity of the multiple quantum wells fabricated by the structure of the present invention is about 15% higher, and the width at half maximum (FWHM) becomes smaller. Of course, peaks that are steeper and more intense are higher quality. In this way, the quality of multiple quantum wells will increas...

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Abstract

A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.

Description

technical field [0001] The present invention relates to a vapor-phase film-forming device for forming a semiconductor film on a semiconductor or oxide substrate. Specifically, it relates to a vapor-phase film-forming device that allows the substrate to rotate and revolve during film formation. Background technique [0002] Generally speaking, there are three necessary elements to ensure the high quality of the film formed by the vapor phase film forming method. Specifically, it is (a) film-forming pressure, (b) flow velocity, and (c) film-forming speed curve. The influences on the film-forming quality will be described in detail below. [0003] First, regarding (a) film-forming pressure, it is especially important for elements with highly volatile components. For a film-forming system with highly volatile component elements, increasing the film-forming pressure will increase the partial pressure of the volatile component elements. As a result, the detachment of the volatil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/00
CPCC23C16/45508C23C16/45563C23C16/4584C23C16/303
Inventor 须田昇大石隆宏米野纯次卢柏菁薛士雍钟步青
Owner HERMES EPITEK