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Substrates and corresponding photolithographic methods for high-resolution electron lithography

A high-resolution, substrate-based technique for e-beam lithography that addresses issues such as unsatisfactory high-energy incident beam results

Inactive Publication Date: 2019-06-28
原子能和辅助替代能源委员会
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the results are unsatisfactory especially for high-energy incident beams

Method used

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  • Substrates and corresponding photolithographic methods for high-resolution electron lithography
  • Substrates and corresponding photolithographic methods for high-resolution electron lithography
  • Substrates and corresponding photolithographic methods for high-resolution electron lithography

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Embodiment Construction

[0034] figure 1 A regular dense pattern of lines is shown, which is expected to be inscribed in an electron-sensitive or electrosensitive layer deposited on a substrate. By way of example, this pattern includes 5 nanometer wide lines separated by 5 nanometer spacing.

[0035] The electron beam used to expose the photosensitive layer has a diameter of less than 5 nanometers, and for this purpose, it has a very high energy, preferably 30 to 100 keV or higher; due to this high energy, electrons are trapped in the substrate supporting the photosensitive layer Backscattering, these electrons can expose the photosensitive layer outside the beam impingement area, either between the lines to be exposed or on the lines adjacent to the beam impingement location. Due to the backscattering of the electrons towards the spaces between the lines, there is a risk of partial exposure of the photosensitive layer which should not be exposed. Due to the backscattering of electrons towards adjac...

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Abstract

The present invention relates to very high energy (50 keV or higher) electron beam lithography. According to the invention, the layer to be patterned by photolithographic techniques is supported by a holding structure comprising a substrate 10 (for example made of silicon) and an intermediate layer 22 made of a porous material whose The density is lower than that of an otherwise identical but non-porous material, especially silicon or carbon nanotubes, having a small atomic number, less than 32 and preferably less than 20. This structure reduces the effect of backscattered electrons on high-resolution photolithographic patterns.

Description

technical field [0001] The present invention relates to electron beam lithography. Background technique [0002] Electron beam lithography is known to enable the writing or transformation of very small and extremely dense patterns that cannot be written or transformed by photolithography due to diffraction effects using visible or UV light. The resolution limit of photolithography remains about the wavelength of the light used. The resolution limit of e-beam lithography can be around 10 nanometers or even less, that is, it must theoretically be possible to track patterns comprising features with widths and pitches as small as 10 nanometers or even less. [0003] These resolutions can be very useful for fabricating UV or X-ray diffractive optics. These diffractive optical elements may be diffractive gratings, Fresnel lenses, or other elements such as known as blazed gratings, which are regular saw-tooth etched patterns intended to increase the diffraction efficiency of etch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/09G03F7/11G03F7/20
CPCG03F7/09G03F7/11H01J2237/31769H01J2237/31796G03F7/091G03F7/20G03F7/40
Inventor J-L·安贝尔C·康斯坦恰斯
Owner 原子能和辅助替代能源委员会
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