Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fixed-frequency slow wave adjustable device

A fixed frequency, graphene technology, applied in nonlinear optics, instruments, optics, etc., can solve the problems of large volume and low sensitivity, and achieve the effect of simple and convenient regulation

Inactive Publication Date: 2015-04-22
TONGJI UNIV
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its volume is large and its sensitivity is relatively low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fixed-frequency slow wave adjustable device
  • Fixed-frequency slow wave adjustable device
  • Fixed-frequency slow wave adjustable device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] A fixed frequency slow wave adjustable device, its structure is as follows Figure 1-2 As shown, it consists of a dielectric substrate 1 and four graphene strips 2 arranged on the dielectric substrate 1 . The composition structure of graphene strip 2 is a classical electromagnetically induced transparent unit structure. The bright state consists of two closely arranged vertical graphene strips. The dark state consists of two graphene strips arranged in parallel up and down. The length and width of the two graphene strips 2 in the bright state are 65 and 10 nm, respectively. The length and width of the two graphene strips 2 in the dark state are 49 and 12 nanometers, respectively. The dielectric constant of the dielectric substrate is 2.1. In the dark state the two bars are separated by 8 nm. The distance between bright and dark states is 20nm. The cell period is 120 nm. The voltage of the bright state graphene corresponds to the Fermi level and selects three para...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a fixed-frequency slow wave adjustable device which comprises a dielectric substrate and four graphene strips arranged on the dielectric substrate. Two graphene strips are tightly arrayed vertically and are used as electromagnetism-like induced transparency illuminated state units. The other two graphene strips are arrayed by a certain distance up and down horizontally and are used as electromagnetism-like induced transparency dark state units. Compared with the prior art, the structure is miniaturized, in addition, the optical response of graphene at a terahertz wave band is very strong so that in a transmission direction, one structure layer can achieve six-magnitude-order light speed lowering, the Fermi level of the graphene is very sensitive to external voltage, accordingly, the optical response of the graphene can be adjusted by adjusting the external voltage of the device, and slow wave adjustable performance is achieved.

Description

technical field [0001] The invention relates to a wavelength adjusting device, in particular to an adjustable fixed frequency slow wave device. Background technique [0002] As the most important part of realizing photonic communication (optical switch and optical storage), tunable slow wave has been extensively studied. Among the existing technologies, people use the electromagnetically induced transparency of the atomic system to realize the slow wave technology. The highest record can reduce the speed of light from 300,000 kilometers per second to 7 meters per second. The electromagnetic induction transparency of the atomic system refers to the use of another laser beam to regulate the optical response of the atomic medium, so that one of the energy levels (ground state or excited state) in the original two-level atomic system undergoes degeneracy splitting. In this way, there are two ways to reach the excited state, and interference destructive occurs, so that a very na...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/00
CPCG02F1/00
Inventor 石溪孙勇
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com