The invention relates to a room-temperature terahertz wave
detector which uses a
transistor with
high electron mobility as a basic structure and comprises an antenna capable of efficiently
coupling with terahertz
waves, wherein the antenna and the
transistor with
high electron mobility are integrally arranged, but the antenna is mutually independent from the source
electrode and drain
electrode of the
transistor with
high electron mobility; a pair of butterfly antennae are connected between the source
electrode and the drain electrode so as to generate a crosswise terahertz
electric field in an
electron channel; and one butterfly antenna is connected to the drain electrode of the transistor with high
electron mobility so as to generate a lengthways terahertz
electric field in the
electron channel. By utilizing the
detector provided by the invention, the regulation and control carried out on the two-dimensional
plasma wave by the grid electrode of the transistor with high
electron mobility can be effectively enhanced, and the terahertz wave can be detected with high speed, high efficiency, high sensitivity and
low noise; simultaneously, under the working condition of
room temperature, the application scope of terahertz wave can be obviously widened, and the application cost can be lowered; and, the room-temperature terahertz wave
detector can be manufactured by using a
semiconductor micro-
processing technique with minimized device structure and high integrated level.