SiC VDMOSFET structure with low specific on-resistance and manufacturing method thereof

Abstract

The invention discloses a SiC VDMOSFET structure with low specific on-resistance and a manufacturing method of the SiC VDMOSFET structure with the low specific on-resistance. According to the structure, an N- drifting region is formed on an N+ substrate, a P-type base region and a JFET region are formed above the N- drifting region, and the P-type base region surrounds the JFET region; a P+ region and an N+ region are formed in the P-type base region; a gate dielectric layer is formed on the JFET region; an N- conductive channel layer is formed between the gate dielectric layer and the P-type base region and surrounds the JEFT region. An N current diffusion layer is formed on the joint of the JEFT region and the N- drifting region, and the width of the N current diffusion layer is the same as that of an N- drifting layer. Due to the SiC VDMOSFET structure, channel resistance and drifting region resistance can be lowered, and the on-resistance of the VDMOSFET structure can be lowered.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a SiC VDMOSFET structure and a manufacturing method thereof which play an important role in the fields of high temperature, high frequency, medium and high voltage power electronics and the like. Background technique [0002] For a long time, Si materials have occupied a dominant position in the semiconductor field and are used in high-temperature and high-frequency circuits. However, with the advancement of technology and the expansion of application fields, Si-based devices are becoming more and more difficult to meet the requirements of harsher environments and higher performance, so people turn their attention to wide bandgap semiconductors. SiC material is considered to be a very potential third-generation semiconductor material. SiC material has higher breakdown field strength, higher carrier saturation velocity and higher thermal conductivity than Si mat...

AI Technical Summary

Problems solved by technology

But in terms of technology, due to SiC / SiO 2 The surface interface state density is very high, the characteristic on-resistance is large, and it has the JFET effect at the same time, resulting in high on-resistance, and due to the concentration of power lines at the corners of the p-n interface, avalanche breakdown is prone to occur

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