Chemical mechanical polishing method
A technology of chemical machinery and polishing pads, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as scratches on aluminum metal gates, and achieve the effect of improving performance and output
Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
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- Abstract
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- Application Information
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Problems solved by technology
However, since aluminum metal is a soft material, scratches (scratch) will easily appear on the aluminum metal grid after chemical polishing and mechanical polishing processes
Method used
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[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0023] For a thorough understanding of the present invention, a detailed description will be set forth in the following description to illustrate the method of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0024] It should be noted that the terms used herein are for the purpose of des...
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Abstract
The invention discloses a chemical mechanical polishing method. The chemical mechanical polishing method comprises the following steps: step a, providing a semiconductor substrate with metal grids formed thereon; step b, placing the semiconductor substrate on a first polishing pad to be polished, wherein the first polishing pad is a hard polishing pad, and the thickness of the residual metal grids polished by the first polishing pad ranges from 500 A to 1000 A; step c, placing the semiconductor substrate on a second polishing pad to be polished, wherein the second polishing pad is a soft polishing pad, the pressure intensity between the second polishing pad and the semiconductor substrate ranges from 0.5 PSI to 0.8 PSI, and the second polishing pad rotates at the speed of 110 rpm to 150 rpm to reduce tiny scratches. According to the CMP method, metal grid structures with minor scratches can be obtained to further improve the performance and the yield of semi-conductor devices.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a chemical mechanical polishing method. Background technique [0002] With the increasing maturity of semiconductor integrated circuit (IC) industrial technology and the rapid development of ultra-large-scale integrated circuits, the size of devices is getting smaller and smaller, and the integration of chips is getting higher and higher. Due to the high density of devices, the requirement of small size has an increasingly prominent impact on semiconductor technology. The continuous increase of IC integration requires the continuous scaling down of device size, but the operating voltage of electrical appliances sometimes remains unchanged, resulting in higher power consumption of actual metal oxide semiconductor (MOS) devices. Polysilicon and silicon dioxide are commonly used to form gates and interlayer dielectrics of MOS transistors. [0003] As the gate size shrinks t...
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IPC IPC(8): H01L21/321H01L21/28
CPCH01L21/28079
Inventor 蒋莉黎铭琦
Owner SEMICON MFG INT (SHANGHAI) CORP