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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as unstable performance of SOI radio frequency switching devices, and achieve the effects of easy diffusion control, technical requirements, and simplified process steps.

Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] However, the performance of SOI RF switching devices formed by the existing technology is not stable

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Experimental program
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Embodiment Construction

[0033] As mentioned in the background art, the performance of the SOI radio frequency switch device formed by the prior art is not stable.

[0034] After research, it was found that in the formation of figure 1 In the process of the semiconductor device, the formation process of the doped layer 102 located in the semiconductor substrate 110 is as follows: the gate structure 103 is formed on the surface of the semiconductor layer 112, and the source regions 104 in the semiconductor layer 112 on both sides of the gate structure 103 and the drain region 105, and after the dielectric layer 106 is formed on the surface of the semiconductor layer 112, the isolation structure 101 and the gate structure 103, the dielectric layer 106 between the adjacent gate structures 103 is etched using an anisotropic dry etching process , the isolation structure 101 and the insulating layer 111, until the surface of the semiconductor substrate 110 is exposed, forming a via hole in the dielectric la...

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Abstract

The invention relates to a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the following steps: providing a substrate, wherein the substrate comprises a semiconductor substrate, an insulating layer positioned on the surface of the semiconductor substrate and semiconductor layers positioned on the surface of the insulating layer, the substrate is provided with a plurality of device regions and doping regions positioned between the adjacent device regions, a first doping layer is formed in the semiconductor substrate in the doping regions, and the surface of the first doping layer is in contact with the insulating layer; removing the semiconductor layers in the doping regions and forming a plurality of openings in the semiconductor layers, wherein the openings are at least exposed out of the insulating layer positioned at the top end of the first doping layer; forming an isolation structure in the openings; after the isolation structure is formed, forming devices on the surfaces of part of the semiconductor layers in the device regions; forming first conductive plugs on the surface of the semiconductor layers on the two sides of each device; after the devices are formed, forming a second conductive plug on the surface of the first doping layer. The performance of the formed semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the development of wireless communication technology, there is a situation where multiple communication standards coexist, such as GSM, WCDMA, CDMA or TD-SCDMA. In order to enable the communication terminal to support different communication standards, multiple radio frequency power amplifiers supporting different communication standards need to be installed in the communication terminal, and a radio frequency switch is used to switch the required radio frequency power amplifier to the transmission channel. At the same time, the radio frequency switch can also be used to switch the transmission and reception channels in time-division multiplexing communication. [0003] In an existing communication terminal, such as a mobile phone device, a controller of a radio frequency ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L27/12
CPCH01L21/8238H01L21/84
Inventor 洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
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