The invention provides an on-
chip variable resistance device structure and
electronic equipment. The on-
chip variable resistance device structure comprises a substrate, a
nitride epitaxial layer, an
electrode structure layer and a gate structure layer, wherein the
nitride epitaxial layer is formed on the substrate; the
electrode structure layer and the gate structure layer are formed on the
nitride epitaxial layer; the
electrode structure layer comprises a first electrode and a second electrode, the nitride epitaxial layer comprises a channel layer and a
barrier layer which are used for forming a
heterojunction interface, and the gate structure layer comprises a first
semiconductor layer and a third electrode which are stacked and formed on the
barrier layer, and a separation groove formed in the first
semiconductor layer. By regulating and controlling the extension path and the structure parameter of the separation groove on the
barrier layer and combining the applied
voltage of the third electrode, the concentration and the distribution of two-dimensional
electron gas at the
heterojunction interface and the
dynamic control of a
conductive channel can be realized, so that the wide-range and high-precision dynamic adjustment of the on-
chip resistance device structure on-resistance is realized, and the on-chip resistance device is suitable for large-scale production. The technical requirements of a high-performance integrated
system on the on-chip variable
resistor are met, and the on-chip variable
resistor has important application value.