Check patentability & draft patents in minutes with Patsnap Eureka AI!

Solid-state imaging device and electronic equipment

A camera device, solid-state technology, applied to radiation control devices, circuits, electrical components, etc., can solve problems such as enlargement

Active Publication Date: 2019-08-09
SONY CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Meanwhile, in back-illuminated solid-state imaging devices, inter-wiring capacitances such as load capacitances of vertical signal lines for reading out signals obtained in pixels increase due to miniaturization of pixel sizes. Big

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device and electronic equipment
  • Solid-state imaging device and electronic equipment
  • Solid-state imaging device and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0044] (Example of the structure of a solid-state imaging device)

[0045] First, a configuration example of a solid-state imaging device according to the present invention will be explained. figure 1 The configuration of an embodiment of the solid-state imaging device according to the present invention is shown.

[0046] The solid-state imaging device 11 is a back-illuminated image sensor including, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor or the like. The solid-state imaging device 11 receives light from a subject, performs photoelectric conversion to generate an image signal, and captures an image.

[0047] The backside illuminated image sensor is an image sensor having a configuration in which a photodiode for receiving light from a subject is provided on a light receiving plane (ie, a sheet for collecting light) on which light from the subject is incident. lens) and a wiring layer provided with wiring for transistors and the like for dr...

no. 3 example

[0108] (Wiring pattern of power supply wiring)

[0109] Also, in e.g. Figure 8 In the illustrated wiring pattern, the power supply wiring 63 may be provided in the wiring layer 57 . Figure 8 shown in the figure 2 Viewed in the direction of the upper part facing down figure 2 Figure obtained from the pixel array section 21 shown in . exist Figure 8 , denoted with the same reference numerals as the Figure 5 Components corresponding to the cases in , and their descriptions are omitted as appropriate.

[0110] In this example, the power supply wiring 63 includes a wiring 201-1 to a wiring 201-6, which are extended in the illustrated lateral direction and arranged at equal intervals in the longitudinal direction. The wiring 201 - 1 to 201 - 6 are arranged to cross all the vertical signal lines 27 . Hereinafter, the wiring 201 - 1 to the wiring 201 - 6 are simply referred to as the wiring 201 unless there is a need to distinguish them in particular.

[0111] Each wirin...

no. 4 example

[0115] (Wiring pattern of power supply wiring)

[0116] Also, in e.g. Figure 9 In the illustrated wiring pattern, the power supply wiring 63 may be provided in the wiring layer 57 . Figure 9 shown in the figure 2 Viewed in the direction of the upper part facing down figure 2 Figure obtained from the pixel array section 21 shown. exist Figure 9 , denoted with the same reference numerals as the Figure 5 Components corresponding to the cases in , and their descriptions are omitted as appropriate.

[0117]In this example, the power supply wiring 63 includes a wiring 221-1 to a wiring 221-6, which extend in the illustrated lateral direction and are arranged at equal intervals in the longitudinal direction. The wiring 221 - 1 to 221 - 6 are arranged to cross all the vertical signal lines 27 . Hereinafter, the wiring 221 - 1 to the wiring 221 - 6 are simply referred to as the wiring 221 unless they need to be particularly distinguished.

[0118] The wirings 221 have dif...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a solid-state imaging device and electronic equipment. In the pixel array in the solid-state imaging device, the vertical signal lines are arranged away from the floating diffusion region and directly below the power wiring to reduce the load capacitance of the vertical signal lines. In addition, the power supply wiring is wired such that the respective vertical signal lines cover almost the same coverage of the power supply wiring. Therefore, it is possible to suppress the difference in the load capacitance of the vertical signal lines of the respective pixels. This makes it possible to suppress variations in black level, variations in charge transfer, and variations in stability, and obtain high-quality images.

Description

technical field [0001] The present invention relates to a solid-state imaging device and electronic equipment. More particularly, the present invention relates to solid-state imaging devices and electronic equipment capable of acquiring high-quality images Background technique [0002] In the past, there has been known a back-illuminated solid-state imaging device having a photodiode for receiving light from a light-emitting object provided between an on-chip lens for collecting light from a light-emitting object and a wiring layer. The wiring layer is provided with wiring for transistors and the like for driving each pixel. [0003] In the back-illuminated solid-state imaging device, transistor wiring and the like are not provided between a lens for collecting light and a photodiode for receiving light. Therefore, it is possible to make the pixel aperture larger and receive more light. Thus, high-quality images can be obtained. [0004] Meanwhile, in back-illuminated so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14643
Inventor 上坂祐介山本敦彦
Owner SONY CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com