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Magnetic resistance element, magnetic sensor device and manufacturing method of magnetic resistance element

A technology of a magnetoresistive element and a manufacturing method, which is applied in the manufacture/processing of electromagnetic devices, and a resistor for magnetic field control, etc., can solve the problem that the magnetoresistive film cannot be sufficiently prevented from being oxidized.

Active Publication Date: 2015-04-29
SANKYO SEIKI MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even with the above methods, it is not possible to sufficiently prevent oxidation of the surface of the magnetoresistive film.

Method used

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  • Magnetic resistance element, magnetic sensor device and manufacturing method of magnetic resistance element
  • Magnetic resistance element, magnetic sensor device and manufacturing method of magnetic resistance element
  • Magnetic resistance element, magnetic sensor device and manufacturing method of magnetic resistance element

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Embodiment Construction

[0044] Hereinafter, embodiments of a magnetoresistive element, a magnetic sensor device, and a rotary encoder to which the present invention is applied will be described with reference to the drawings. In addition, in the rotary encoder, when detecting the rotation of the rotor relative to the stator, a structure in which a magnet is provided in the stator and a reluctance element in the rotor, and a structure in which a reluctance element is provided in the stator and a magnet in the rotor can be employed. In any configuration, in the following description, a configuration in which a magnetic sensor device is provided in a stator and a magnet is provided in a rotor will be mainly described.

[0045] (Structure of Magnetic Sensor Device)

[0046] figure 1 It is an explanatory diagram showing the principle of the magnetic sensor device 10 having the magnetoresistive element 4 to which the present invention is applied, and the rotary encoder 1, figure 1 (a) is an explanatory d...

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Abstract

The invention provides a magnetic resistance element, a magnetic sensor device and a manufacturing method of the magnetic resistance element. Even a resisting layer is capable of protecting the surface of a magnetic resistance film against oxidization, the resistance change rate of the magnetic resistance element caused by magnetic resistance can be higher. In the magnetic resistance element (4), a temperature monitoring electric resistance film (47) and a heating electric resistance film (48), which are formed by titanium, aluminum and so on are formed on a substrate (40) on which magnetic resistance films (41-44) are formed. Resistance layers (71-74) which are formed by titanium, aluminum and so on are laminated on one face opposite to the side where the magnetic resistance films (41-44) are arranged of the substrate (40). Thickness of the resistance layers (71-74) is smaller than that of the magnetic resistance films (41-44). After the magnetic resistance films are formed on the magnetic resistance element (4), the resistance layers are laminated on the surface of the magnetic resistance film, preventing the magnetic resistance film from contacting with oxidizing atmosphere and then the magnetic resistance film and the resistance layers are patterned.

Description

technical field [0001] The present invention relates to a magnetoresistive element having a magnetoresistive film formed on a substrate, a magnetic sensor device having the magnetoresistive element, and a method for manufacturing the magnetoresistive element. Background technique [0002] In a rotary encoder that detects rotation of a rotor relative to a stator, for example, a magnet is provided on the rotor side, and a magnetic sensor device having a magnetoresistive element is provided on the stator side. In the magnetoresistive element, a magnetoresistive film made of Ni-Fe or the like is formed on one surface of the substrate, and based on an output from a two-phase (A-phase and B-phase) bridge circuit made of the magnetoresistive film, The angular velocity, angular position, and the like of the rotor are detected (for example, refer to Patent Document 1). [0003] When manufacturing the magnetoresistive element, a magnetoresistive film is formed on one surface of the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12
Inventor 八幡亮一
Owner SANKYO SEIKI MFG CO LTD
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