Formation of epitaxial layers containing silicon

Abstract

Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.

Description

[0001] This application is a divisional application of the invention patent application with the application date of December 11, 2007, the application number is 200780044461.7, and the invention title is "Formation of Silicon-Containing Epitaxial Layer". [0002] related application [0003] This application claims priority to US Patent Application Serial No. 11 / 609590, filed December 12, 2006, the disclosure of which is incorporated herein by reference in its entirety. technical field [0004] Embodiments of the present invention relate to a method and apparatus for processing and forming silicon-containing epitaxial layers. Detailed embodiments relate to methods and apparatus for the formation and processing of epitaxial layers in semiconductor components, such as metal oxide semiconductor field effect transistor (MOSFET) devices. Background technique [0005] The amount of current flowing through a channel of a MOS transistor is directly proportional to the carrier mobi...

AI Technical Summary

Problems solved by technology

If not enough silicon precursor is provided, then the etch reaction will dominate and the overall process will slow down

In addition, detrimental over-etching of substrate features may also occur

If sufficient etchant precursors are not provided, then the deposition reaction will predominate thereby reducing the selectivity to form monocrystalline and polycrystalline material across the substrate surface

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