Solid-state imaging device and method for manufacturing solid-state imaging device

Abstract

A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.

Description

[0001] This application enjoys the benefit of priority of Japanese Patent Application No. 2013-225904 filed on October 30, 2013, and the entire contents of this Japanese Patent Application are incorporated herein by reference. technical field [0002] This embodiment generally relates to a solid-state imaging device and a method of manufacturing the solid-state imaging device. Background technique [0003] Conventionally, a CMOS (Complementary Metal Oxide Semiconductor: Complementary Metal Oxide Semiconductor) image sensor provided in a solid-state imaging device includes a plurality of photoelectric conversion elements, a floating diffusion, a transfer transistor, a reset transistor, and an amplifier transistor. Wait. [0004] The photoelectric conversion element is an element that photoelectrically converts incident light into signal charges corresponding to the amount of light and stores them. The transfer transistor is a transistor that transfers signal charges accumula...

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Problems solved by technology

[0006] However, in solid-state imaging devices, when the impurity concentration of the well is increased in order to improve element isolation characteristics, for example, the modulation degree of the amplifier transistor may be lowered, and the C / N ratio (Carrier to Noise Ratio: carrier-to-noise ratio) of the output signal may deteriorate.

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