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A low-emissivity film

A low-radiation, thin-film technology, applied in the direction of metal layered products, chemical instruments and methods, layered products, etc., can solve the problems of thin film manufacturing and parameter detection, complex preparation process, high production cost, etc., and achieve simplified film deposition Effects of process flow, increase in transmittance, and reduction in the number of layers

Active Publication Date: 2017-08-01
HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Low-E films currently on the market are roughly divided into: Single Silver Low-E Film (Single Low-E Film), Double Silver Low-E Film (Double Low-E Film) and Periodic Multilayer Low-E Film (Photonic Crystal Low-E Film) -E Film); Among them, the visible light transmittance of the silver-based low-emissivity film is only 50% to 80%, and because the silver-based film includes a protective layer, a barrier layer, a combination layer, etc., it corresponds to different materials, different thicknesses, different The film layer with optical properties and different physical and chemical process parameters lead to difficulties in film manufacturing and parameter detection;
[0004] The periodic multi-layer low-emissivity film has an average UV transmittance of about 30%, an infrared transmittance of less than 10% in the wavelength range of 800nm ​​to 1200nm, and an average value of about 85% in the wavelength range of greater than 1200nm. 40 layers, large thickness; because the periodic multilayer film needs to be deposited and covered more than 30 times, the preparation process is complicated and the production cost is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The thickness of the low-radiation film provided by Example 1 is 1410nm, including a single silver layer and a periodic multilayer film. Specifically, the thickness of the Ag film is 10nm, and the thickness of the TiO 2 The thickness of the protective layer is 25nm; in the periodic multilayer film, TiO 2 Film thickness is 106nm, SiO 2 The film thickness is 164nm; the central wavelength λ of the periodic multilayer film 0 950nm.

[0039] figure 2 Shown is the effect diagram of the transmittance of the low-emissivity film provided by Example 1 of the present invention. The transmittance of visible light is 70-96%, and the transmittance of most bands of visible light is above 85%, and the transmittance of ultraviolet bands is lower than 15%, the transmittance of the infrared band from 780nm to 1200nm is lower than 10%, and the transmittance of the infrared band from 1200nm to 3000nm reaches 25%.

Embodiment 2~7

[0041] The low-emissivity films provided in Examples 2-7 include a single silver layer and a periodic multilayer film, and the specific parameters are as shown in Table 1. The transmittances of the low-emissivity films provided in Examples 2-7 are shown in Table 2:

[0042] The film layer parameter list of table 1 embodiment 2~7

[0043]

[0044] Table 2 The transmittance table of each band of embodiment 2~7

[0045]

[0046] Analysis of the low-emissivity films provided in Examples 1 to 7 found that the thickness of the metal Ag film B2 was 9 nm to 12 nm, and the protective layer B1 TiO 2 The thickness is 10nm ~ 40nm and the center wavelength λ 0 The low-emissivity film in the range of 900nm to 1050nm, its transmittance fluctuates within a controllable range, the visible light transmittance ranges from 63% to 96%, and the transmittance of most bands of visible light is above 80%, and the average transmittance in the ultraviolet region 10%-18%, the transmittance in the...

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Abstract

The invention discloses a low-emissivity film. The low-emissivity film comprises a substrate, a single silver layer and a periodical multi-layer film, wherein the single silver layer covers the substrate, is composed of two protective layers and an Ag film, and has the thickness of 29nm-92nm; the thickness of the lower-emissivity film is 1325nm-1575.8nm; the periodical multi-layer film covers the single silver layer and is formed by alternatively overlapping a high-refractive-index material and a low-refractive-index material, and has the thickness of 1275nm-1490nm. For the low-emissivity film disclosed by the invention, the transmission of long-wavelength infrared waves and short-wavelength ultraviolet waves is inhibited by adopting a metal thin silver layer, the transmission of a visible light waveband is intensified by adopting a periodical structure, the transmissivity for visible light is 70-96%, the transmissivity for the ultraviolet wave band is reduced to be 15%, the transmissivity for 780nm-1200nm infrared wave band is reduced to be below 10%, the transmissivity for the 1200-3000 infrared wave band is reduced to be below 25%, the number of layers is obviously reduced, the cost is reduced to a great extent, and the technological process is simplified.

Description

technical field [0001] The present invention relates to a thin film structure, more specifically, to a low-radiation thin film structure. Background technique [0002] Low-Emissivity Film (Low-E Film) is a film with high reflection to infrared and ultraviolet rays and good transmittance to visible light, which can realize functions such as regulating sunlight and heat, saving energy, and improving the environment. [0003] Low-E films currently on the market are roughly divided into: Single Silver Low-E Film (Single Low-E Film), Double Silver Low-E Film (Double Low-E Film) and Periodic Multilayer Low-E Film (Photonic Crystal Low-E Film) -E Film); Among them, the visible light transmittance of the silver-based low-emissivity film is only 50% to 80%, and because the silver-based film includes a protective layer, a barrier layer, a combination layer, etc., it corresponds to different materials, different thicknesses, different The film layer with optical properties and differe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/04B32B15/00
CPCB32B9/04B32B15/00B32B2307/414B32B2307/42
Inventor 王鲜祁冬龚韦龚荣洲
Owner HUAZHONG UNIV OF SCI & TECH
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