Semiconductor photosensitive device and manufacturing method thereof
A technology for photosensitive devices and manufacturing methods, which is applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of unfavorable chip miniaturization, lower chip density, and large unit area, and achieve increased density, increased sensitivity, and improved resolution. rate effect
Active Publication Date: 2018-02-02
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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[0005] In order to ensure the performance of the semiconductor photosensitive device, the semiconductor photosensitive device with a planar channel needs a longer channel length, which makes the unit area of the semiconductor photosensitive device larger, thereby reducing the chip density, which is not conducive to the development of the chip in the direction of miniaturization. At the same time, the light absorption region of the photosensitive pn junction diode of the semiconductor photosensitive device of the planar channel in the prior art is located on the surface of the semiconductor substrate, which is easily disturbed
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[0051] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiments of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Also in the following description, the term substrate used may be understood to ...
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A vertically configured photosensitive semiconductor device and method for fabrication thereof; the photosensitive semiconductor device comprising a semiconductor substrate, in which is provided a U-shaped groove; drain regions are provided in the semiconductor substrate of the two sides of the U-shaped groove, a buried source region is provided in the semiconductor substrate at the bottom of the U-shaped groove, a control gate and two floating gates used for storing charge are provided in the U-shaped groove, and photosensitive PN junction diodes connecting said floating gates and drain regions are provided in the semiconductor substrate of the two sides of the U-shaped groove; PIN diodes can also be provided in the semiconductor substrate of the two sides of the U-shaped groove. The photosensitive semiconductor device has the advantages of small unit area, high chip density, and high sensitivity, improving the resolution of an image sensor chip.
Description
technical field [0001] The invention relates to a semiconductor photosensitive device and a manufacturing method thereof, in particular to a semiconductor photosensitive device with a vertical structure and a manufacturing method thereof, belonging to the technical field of semiconductor photosensitive devices. Background technique [0002] Image sensors are semiconductor photosensitive devices used to convert optical signals into electrical signals. Image sensor chips composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones. [0003] A semiconductor photosensitive device with a planar channel in the prior art, such as figure 1 , which is a cross-sectional view along the channel length of the device. The semiconductor photosensitive device 10 is usually formed in a semiconductor substrate or a doped well 500, the semiconductor substrate or the doped well 500 is doped with a low concentration of n-type ...
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IPC IPC(8): H01L27/146H01L29/10H01L31/0352
CPCH01L27/14607H01L27/1461H01L27/14614H01L27/1463H01L27/14689
Inventor 龚轶王鹏飞刘伟刘磊
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD