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Detection method for alignment of device patterns on the front side of wafers with back holes on the back side

A detection method and wafer technology, applied in the field of semiconductors, can solve the problems of weak penetration of infrared light to metal, blocking deformation parts, and difficulty in detecting alignment or not.

Active Publication Date: 2017-09-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since metal interconnection lines or other metal devices are formed on the front side S1 of the wafer 1, the penetration of infrared light to the metal is very weak, which will block the imaging of the deformation part 6 and the back hole 5, and it is difficult to detect both. Alignment in the direction perpendicular to the front of the wafer

Method used

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  • Detection method for alignment of device patterns on the front side of wafers with back holes on the back side
  • Detection method for alignment of device patterns on the front side of wafers with back holes on the back side
  • Detection method for alignment of device patterns on the front side of wafers with back holes on the back side

Examples

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no. 1 example

[0062] refer to Figure 5 , provide a wafer 100, the wafer has a front side S1 and a back side S2, the front side S1 and the back side S2 are parallel to each other.

[0063] In a specific embodiment, an alignment mark (not shown in the figure) may be formed on the front surface S1 of the wafer 100 , and the alignment mark plays an alignment role in the subsequent photolithography process for defining the position of the device pattern.

[0064] In a specific embodiment, the wafer 100 may be a silicon wafer, a germanium wafer, or a silicon-on-insulator wafer, etc.; or the material of the wafer 100 may also include other materials, such as III-V compounds such as gallium arsenide. Those skilled in the art can select wafers according to needs, so the type of wafers should not limit the protection scope of the present invention.

[0065] refer to Figure 6 , an insulating layer 101 is formed on the front surface S1 of the wafer 100, and the insulating layer 101 plays an insulat...

no. 2 example

[0103] In this example, refer to Figure 13 , Figure 14 , Figure 14 for correspondence Figure 13 top view of Figure 13 for correspondence Figure 14 The schematic diagram of the cross-sectional structure in the BB direction of , the detection mark 302 includes two sets of scale lines opposite to each other, which are the first set of scale lines 311 and the second set of scale lines 312 . The first set of scale lines 311 includes multiple first scale lines 321 spaced apart from each other on a straight line of the cross, and the second set of scale lines 312 includes multiple second scale lines spaced apart from each other on another straight line of the cross. 322;

[0104] The intersection point of the cross is defined within the boundary range of the lower surface of the device figure, the lower surface boundary of the device figure has two first intersection points on the first set of scale lines 311, and two second intersection points on the second set of scale l...

no. 3 example

[0121] refer to Figure 18 , Figure 18As a top view, detection marks 502 are formed on the insulating layer 501 . The detection mark 502 includes a cross first coordinate axis 511 and a second coordinate axis 512, and the intersection of the first coordinate axis 511 and the second coordinate axis 512 is defined in the lower surface of the device pattern to be formed;

[0122] A plurality of first scale lines 521 distributed at equal intervals are arranged on the first coordinate axis 511 , and a plurality of second scale lines 522 distributed at equal intervals are arranged on the second coordinate axis 512 . The predefined first alignment position is the first coordinate of the two first intersection points of the boundary of the lower surface of the subsequent device pattern and the first coordinate axis 511, and the second point of the two second intersection points of the boundary of the lower surface of the device pattern and the second coordinate axis 512. coordinate...

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Abstract

A method for detecting the alignment of a device pattern on the front of a wafer with a back hole on the back, comprising: providing a wafer; forming an insulating layer on the front of the wafer; forming a detection mark on the upper surface of the insulating layer, with a gap between the detection mark and the insulating layer Chromatic aberration; form a device pattern on an insulating layer, the lower surface boundary of the device pattern and the detection mark have a first alignment position in a direction perpendicular to the front of the wafer; form a back hole on the back of the wafer; use an optical microscope to open through the back hole Observe and obtain the second alignment position of the bottom boundary of the back hole and the detection mark in the direction perpendicular to the front of the wafer. When the second and first alignment positions are the same, it is determined that the device pattern is aligned with the back hole. If the alignment positions are not the same, it is determined that the device pattern and the back hole are not aligned. Using this technical solution does not require infrared light irradiation, and visual observation with an optical microscope can achieve the detection purpose of aligning the device pattern on the front of the wafer with the back hole on the back, and the operation is simple and easy to realize.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting the alignment of device patterns on the front of a wafer and back holes on the back. Background technique [0002] A micro-electromechanical system (MEMS) is a tiny device that integrates microelectronic circuits and micromechanical brakes. It can use sensors to receive external information, convert the converted signals through circuit processing and amplify them, and then change them into mechanical operations by actuators. Execute information command. It can be said that MEMS is an integrated device that acquires, processes information and performs mechanical operations. [0003] Taking the MEMS pressure sensor as an example, the external pressure is received through the sensing membrane, and then converted into an electrical signal to measure specific pressure information. Pressure sensors are divided into resistive pressure sensors and capacit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/00B81C1/00
Inventor 刘国安徐伟刘煊杰
Owner SEMICON MFG INT (SHANGHAI) CORP
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