Semiconductor and forming method thereof

Abstract

The invention provides a semiconductor and a forming method thereof, wherein the forming method of the semiconductor device comprises the following steps that a semiconductor substrate is provided, and a first interlayer dielectric layer is formed on the surface of the semiconductor substrate; a second interlayer dielectric layer is formed on the surface of the first interlayer dielectric layer; meanwhile, second interlayer dielectric layers in a first region and a second region are etched, a first groove is formed in the second interlayer dielectric layer formed in the first region, a second groove is formed in the second interlayer dielectric layer formed in the second region, in addition, the first groove comprises a first trench and a plurality of first through holes positioned at the bottom of the first trench, and a bulge is formed between the adjacent through holes; a metal blocking layer, an insulation layer and a third metal layer are sequentially formed in the first region, the metal blocking layer covers the bottom and the side wall of the first groove, and the metal blocking layer also covers the side wall and the top of the bulges. The semiconductor method and the forming method have the advantages that the mutual connection structure is formed, meanwhile, an MIM capacitor is formed, the unit area capacitance is increased, and the chip area is saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In VLSI, capacitors are one of the commonly used passive components, which are usually integrated into active components such as bipolar transistors or complementary metal oxide semiconductor (CMOS: Complementary Metal Oxide Semiconductor) transistors. [0003] At present, the technology of manufacturing capacitors can be divided into two types: using polysilicon as the electrode and using metal as the electrode. Using polysilicon as the electrode will cause a lack of carriers, so that when the surface voltage across the capacitor changes, the capacitance will also change. Therefore, capacitors with polysilicon electrodes cannot maintain the linearity requirements of today's logic circuits; capacitors with metal electrodes do not have the above problems. Such capacitors are generally call...

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Problems solved by technology

[0003] At present, the technology of manufacturing capacitors can be divided into two types: using polysilicon as the electrode and using metal as the electrode. Using polysilicon as the electrode will cause a lack of carriers, so that when the surface voltage across the capacitor changes, the capacitance will also change. Therefore, capacitors with polysilicon electrodes cannot maintain the linearity requirements of today's logic circuits; capacitors with metal electrodes do not have the above problems, and such capacitors are generally called Metal-Insulator-Metal (MIM: Metal-Insulator-Metal) capacitors

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