Method for producing a semiconductor laser diode, and semiconductor laser diode

Abstract

A method for producing a semiconductor laser diode is specified, comprising the following steps: - epitaxially growing a semiconductor layer sequence (2) having at least one active layer (3) on a growth substrate (1) - forming a front facet (5) on the semiconductor layer sequence (2) and the growth substrate (1), wherein the front facet (5) is designed as a main emission surface having a light emission region (6) for the laser light (30) generated in the completed semiconductor laser diode, - forming a coupling-out coating (9) on a second part (52) of the front facet (5), wherein the first part (51) and the second part (52) are arranged at least partly alongside one another in a direction parallel to the front facet (5) and along a growth direction of the semiconductor layer sequence (2), such that the first part (51) is at least partly free of the coupling-out coating (9) and the second part (52) is at least partly free of the light blocking layer (8), and wherein the second part (52) has the light exit region (6), - forming a light blocking layer (8) on a first part (51) of the front facet (5). Furthermore, a semiconductor laser diode is specified.

Description

technical field [0001] A method for producing a semiconductor laser diode and a semiconductor laser diode are presented. [0002] This application claims priority from German patent application 10 2012 106 943.3, the disclosure content of which is hereby incorporated by reference. Background technique [0003] In edge-emitting laser diodes, where the carrier substrate or growth substrate of the laser diode is at least partially transparent to the radiation generated, i.e. this is for example blue-emitting or green-emitting based on GaN substrates In the case of InGaN lasers, scattered or spontaneously emitted light in the lasing mode can propagate in the substrate. When this light emerges from the outcoupling facet, which can also be referred to as substrate luminescence, the beam quality of the emitted laser radiation is reduced because the radiation no longer emerges from a single point-like region on the outcoupling facet and thus The ideal Gaussian emission characteris...

AI Technical Summary

Problems solved by technology

The application of such a radiation-blocking layer on the mirrored or demirrored part is critical and significantly restrictive since adhesion problems can result in the coating on the dielectric layer normally used for mirroring and demirroring. Selection of Metallic Materials and Processes for Radiation Blocking Layers

Furthermore, particularly when metallic materials for radiation blocking are applied directly to the semiconductor, facet damage caused by migration (COD: "catastrophic optical damage") and / or short circuits via pn junctions occurs

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