A method of forming a semiconductor device

Abstract

The invention provides a formation method of a semiconductor device. The formation method includes steps of forming a hard masking layer on a semiconductor substrate, forming a barrier layer above the hard masking layer, and forming a photoresist layer on the barrier layer. Since the barrier layer is formed between the photoresist layer and the hard masking layer, ion diffusion between the hard masking layer and the photoresist layer is effectively avoided, and formation of side products is effectively prohibited. In addition, the patternized photoresist layer is the masked and etched barrier layer, and the etched barrier layer is the masked and etched hard masking layer after the photoresist layer is removed, and hard masking patterns are formed in the hard masking layer. Compared with the prior art, the formation method of the semiconductor device is capable of effectively avoiding reaction between photoresist, etching gas, fake grid materials and the hard masking layer to generate side products hard to remove to affect successive semiconductor preparation process when the hard masking layer is etched, and performance of the semiconductor device is finally formed.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method for forming a semiconductor device. Background technique [0002] With the development of integrated circuit manufacturing technology, the integration degree of integrated circuits is increasing, and the feature size of integrated circuits is also decreasing, and the quality requirements for electrical components in integrated circuits are becoming more and more stringent. The integrated circuit manufacturing process is also constantly innovating to improve the quality of the manufactured integrated circuit electrical components. [0003] For example, in the gate preparation process of COMS, the gate last process has gradually replaced the gate first process to improve the quality of the gate. The so-called gate-front process means that after forming an opening in the dielectric layer of the semiconductor substrate, the gate material is directly filled in the op...

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Problems solved by technology

[0005] However, in the actual operation process, it is found that after the etching of the hard mask layer 13 is completed, a large number of by-products will be left on the semiconductor substrate and in the photoresist layer 15, and these by-products are difficult to remove. Thus affecting the process of a series of processes such as subsequent metal deposition, and ultimately affecting the quality of the subsequently formed gate

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