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cr buffer circuit

A snubber circuit and current path technology, applied in circuit devices, emergency protection circuit devices, electrical components, etc., can solve the problems of large surge voltage and short-circuit damage of switching components, and achieve the effect of suppressing damping oscillation components and improving the reduction effect.

Active Publication Date: 2016-10-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the surge voltage is large, it may cause short-circuit damage to the switching element

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0038] figure 1 It is a diagram showing a configuration example of a power semiconductor module employing the CR snubber circuit according to the first embodiment. exist figure 1 In the example shown, a power semiconductor module 100 is formed by full-bridge-connecting a plurality of switching elements 7a to 7f, and DC power is supplied from a DC power supply 1 connected between DC terminals P-N, and connected to an output terminal U. Three-phase AC power is supplied to unshown loads connected to , V, and W. In addition, the configuration of the power semiconductor module 100 is not limited thereto. For example, it may be formed by full-bridge connection of four switching elements, or may be formed by one or two switching elements, and the DC power supplied from the DC power supply 1 A configuration in which the voltage is lowered or boosted and supplied to the load, or a configuration in which AC power is supplied from the AC power supply instead of the DC power supply 1 ma...

Embodiment approach 2

[0052] Figure 9 It is a diagram showing an example of mounting the CR snubber circuit on the substrate according to the second embodiment. in addition, Figure 10 Indicates that the CR snubber circuit according to Embodiment 2 is mounted on the substrate, and Figure 9 Diagram of a different example. in addition, Figure 11 yes means Figure 9 and Figure 10 The equivalent circuit diagram of the CR snubber circuit is shown. Additionally, for Figure 9 The shown example of mounting the board on which the CR snubber circuit is mounted on the power semiconductor module is the same as that described in Embodiment 1. Figure 5 same, in addition, for Figure 10 The shown example of mounting the board on which the CR snubber circuit is mounted on the power semiconductor module is the same as that described in Embodiment 1. Figure 7 are the same, so the description is omitted here.

[0053] In Embodiment 1, an example in which surface mount capacitors and resistors are mou...

Embodiment approach 3

[0060] Figure 12 It is a diagram of an example of mounting the CR snubber circuit on the substrate according to the third embodiment. in addition, Figure 13 yes means Figure 12 The equivalent circuit diagram of the CR snubber circuit is shown. in addition, Figure 14 It is a diagram showing an example of the frequency characteristics of the CR snubber circuit according to the third embodiment. Additionally, for installations with Figure 12 The example of mounting the substrate of the CR snubber circuit shown in the power semiconductor module is the same as that described in Embodiment 1. Figure 5 are the same, so the description is omitted here.

[0061] In Embodiments 1 and 2, an example of changing the mounting position and number of resistors was described, but in Figure 12 In the example shown, it is formed so that, on one surface of the double-sided substrate 9 ( Figure 12 A plurality of capacitors 5a, 5b, 5c of the surface mount type can be mounted on the ...

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PUM

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Abstract

A CR snubber circuit capable of improving the effect of reducing the effective inductance component and suppressing the damping oscillation component generated when the switching element is switched is obtained. The capacitor (5) and the resistor (6) are arranged in such a manner that the first current path formed on one surface of the substrate and the second current path formed on the other surface opposite to the one surface of the substrate are sandwiched. The substrates are facing each other, and currents in opposite directions flow through the first current path and the second current path, passing through the capacitor (5), the resistor (6), and the inductance component included in the first current path and the second current path The included inductance component couples to the resulting effective inductance component to form a band-stop filter.

Description

technical field [0001] The invention relates to a CR buffer circuit. Background technique [0002] When a switching element such as a power semiconductor module is turned off, a spike-like surge voltage is generated. If the surge voltage is large, the switching element may be short-circuited and damaged. Currently, there is disclosed a technology that connects the snubber capacitor and the semiconductor module via a highly conductive metal strip and wiring on the substrate to reduce the impedance component between the snubber capacitor and the semiconductor module, thereby turning off the switching element. The spike-like surge voltage that flows during the time is alleviated, and by making the wiring length between the snubber capacitor and the adjacent semiconductor module uniform, the impedance components for each semiconductor module are made approximately equal, so that each The surge voltage protection effect of one semiconductor module is equivalent (for example, Pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/34
CPCH02M1/34H02M1/348H02H7/1225Y02B70/10H02M1/346H02H7/122H02H9/045H02M1/32
Inventor 神田光彦田村静里畑井彰关本安泰野尻祐二林良知
Owner MITSUBISHI ELECTRIC CORP
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