Heating type conveying cavity with controllable temperature and process device and temperature control heating method thereof

Abstract

The invention provides a heating type conveying cavity with controllable temperature. The conveying cavity comprises a first conveying arm and a temperature control heating device, wherein the first conveying arm is arranged in the heating type conveying cavity with the controllable temperature and used for conveying wafers into a process reaction chamber from the heating type conveying cavity with the controllable temperature, and the temperature control heating device further comprises a heating device, a temperature control device and a power transmission line. The heating device is arranged on the inner wall of the heating type conveying cavity with the controllable temperature and electrically connected with an external power source. The temperature control device is electrically connected with the heating device and used for controlling the heating temperature of the heating device. The power transmission line is provided with an over-temperature breaker and a high-temperature fuser and arranged among the heating device, the temperature control device and the external power source. According to the heating type conveying cavity with the controllable temperature, the gradual change of the temperature is achieved when the wafers enter or exit the portion between the process reaction chamber and an external atmospheric pressure chamber, residual gas can be pumped and exhausted easily, crystallization defects are avoided, warping, wafer skipping and breaking are reduced, and then the product yield is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a temperature-controllable heating transfer chamber, a process device and a temperature-controlling heating method thereof. Background technique [0002] At present, in the dry etching, PVD, CVD and other processes in the semiconductor industry, multiple process reaction chambers need to be connected to the vacuum transfer chamber. The vacuum transfer chamber as a carrier mainly has the following functions in the transfer process of the wafer: [0003] 1. As a buffer chamber; the processes of dry etching, PVD, and CVD all need to be completed in a high vacuum environment, so a vacuum transfer chamber must be set up as a buffer chamber for the wafer to enter a high vacuum state from a normal pressure state ; [0004] 2. The vacuum transfer chamber can reduce the impact of tiny particles in the atmosphere on the product and improve the product yield. [0005]...

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Problems solved by technology

[0011] The present invention is aimed at the existing technology, during the process of the entry or exit of the wafer in the traditional process reaction chamber, the excessive temperature difference leads to residual reaction reagents, crystal formation defects, and defects such as wafer warping, chip jumping and breaking. A temperature-controllable heating transfer chamber

[0013] The third purpose of the present invention is to solve the problems in the prior art that when the wafer enters or exits the traditional process reaction chamber, the temperature difference is too large to cause residual reaction reagents, crystal formation defects, and wafer warping, chip jumping and Defects such as broken provide a temperature control method for temperature-controllable heating transfer chamber

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