Thin film transistor and manufacturing method thereof as well as array substrate and display device

Abstract

The invention relates to the display technology field, in particular to a thin film transistor and a manufacturing method thereof as well as an array substrate and a display device. The thin film transistor comprises an active layer (3), a doping layer (2) and a source / drain electrode layer (1), wherein the doping layer (2) is located between the active layer (3) and the source / drain electrode layer (1) and comprises at least two sub-doping layers, the doping concentration of dopant of the source / drain electrode sub-doping layer (4) close to the source / drain electrode layer (1) is larger than that of the dopant of an active sub-doping layer (5) close to the active layer (3), and the doping concentration of dopant of the active sub-doping layer (5) is larger than 0. According to the thin film transistor and the manufacturing method thereof as well as the array substrate and the display device, the technical problem that the contact resistance between the doping layer and the source / drain electrode layer and the contact resistance between the doping layer and the active layer cannot be reduced simultaneously in the prior art is solved, and the thin film transistor and the manufacturing method thereof as well as the array substrate and the display device can be applied to the display technology field.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate, and a display device. Background technique [0002] The main feature of a Thin Film Transistor Liquid Crystal Display (TFT-LCD) is that each pixel is equipped with a semiconductor switching device, that is, a Thin Film Transistor (TFT) device. A TFT device includes a gate electrode, a gate insulating layer, an active layer, and a source / drain electrode layer (including a source electrode, a drain electrode, and a channel) and the like. Among them, a metal-insulator-semiconductor (Metal Insulator Semiconductor, MIS) structure is formed between the gate electrode, the gate insulating layer, and the active layer, and the MIS structure is a key factor for the TFT device to be used as a switch. [0003] The electrical signal generated by the MIS structure in the TFT device is input and output from the sourc...

AI Technical Summary

Problems solved by technology

However, increasing the doping concentration of the dopant in the doped layer will increase the contact resistance between the doped layer and the active layer, which will also cause current loss.

That is, the existing technology cannot simultaneously reduce the contact resistance between the doped layer and the source / drain electrode layer and the contact resistance between the doped layer and the active layer, resulting in current loss

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