Phase change memory abrasion balancing method and system based on random mapping

Abstract

The invention provides a phase change memory abrasion balancing method based on random mapping. The method includes the steps that a memory address random mapping table is generated to serve as a current memory address random mapping table; s / M table items are included in the current memory address random mapping table; s represents the size of a phase change memory, and M represents the size of a phase change memory row; when memory writing operation occurs, if a writing time counter does not reach a preset writing time threshold value, whether adjustment zone bits of corresponding table items in the current memory address random mapping table have been set is judged; if the adjustment zone bits of corresponding table items in the current memory address random mapping table have been set, a mapping relation between a logical memory address and a physical memory address of the current memory address random mapping table is utilized for address conversion; otherwise, a memory adjustment process is conducted, and physical address values and the adjustment zone bits of corresponding table items in the current memory address random mapping table are corrected. According to the method, the phase change memory abrasion balancing effect can be improved, the service life of a phase change memory is prolonged, and influences on performance are reduced to minimum.

Description

technical field [0001] The invention relates to the field of computer technology, in particular to a random mapping-based phase change memory wear leveling method and system. Background technique [0002] Since phase change memory has the disadvantage of limited write times, improving the lifespan of phase change memory has become a key technology for its practical application. Wear leveling technology is one of the main methods to improve the life of phase change memory. [0003] The main problem of the existing wear leveling technology is that it either tracks the number of writes of each memory unit, resulting in a large amount of storage space and performance overhead, or there is information leakage in the memory adjustment method, which cannot resist the attack of malicious wear programs. Contents of the invention [0004] Aiming at the defects in the prior art, the present invention provides a phase change memory wear leveling method and system based on random mapp...

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Problems solved by technology

[0003] The main problem of the existing wear leveling technology is that it either tracks the write times of each memory unit, resulting in a large amount of storage space and performance overhead, or there is information leakage in the memory adjustment method, which cannot resist the attack of malicious wear programs.

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