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Thin film transistor, display substrate and method of manufacturing display substrate

A technology for thin film transistors and display substrates, which is applied in the manufacture of transistors, semiconductor/solid-state devices, and electrical solid-state devices, and can solve problems such as deterioration of electrical characteristics and reliability of thin-film transistors, and damage to oxide semiconductor channels.

Inactive Publication Date: 2015-06-24
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of forming a contact opening (for example, a contact hole) of the etch stop layer, the oxide semiconductor channel may be damaged, thereby causing deterioration of electrical characteristics and reliability of the thin film transistor.

Method used

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  • Thin film transistor, display substrate and method of manufacturing display substrate
  • Thin film transistor, display substrate and method of manufacturing display substrate
  • Thin film transistor, display substrate and method of manufacturing display substrate

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Embodiment Construction

[0027] It will be understood that when an element or layer is referred to as being "on," "connected to" or "coupled to" another element or layer, it can be directly on, It may be directly connected or coupled to said other element or layer, or one or more intervening elements or layers may also be present. When an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Additionally, the use of "may" in describing embodiments of the invention refers to "one or more embodiments of the invention."

[0028] It will be understood that although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be constra...

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PUM

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Abstract

A thin film transistor includes a gate electrode, an active pattern over the gate electrode and including an oxide semiconductor, an etch-stop layer covering the active pattern, a source electrode on the etch-stop layer, a drain electrode on the etch-stop layer and spaced from the source electrode, and an active protection pattern between the etch-stop layer and the active pattern and electrically coupled to the source electrode and the drain electrode.

Description

technical field [0001] Aspects of embodiments of the invention relate to thin film transistors. Background technique [0002] Generally, a thin film transistor for driving a pixel unit in a display device includes a gate electrode, a source electrode, a drain electrode, and an active pattern forming a channel between the source electrode and the drain electrode. The active pattern includes a semiconductor layer including amorphous silicon, polysilicon, oxide semiconductor or the like. [0003] Amorphous silicon has available in approximately 1cm 2 / V to about 10cm 2 The relatively low electron mobility in the range of / V makes the thin film transistor including amorphous silicon have relatively low driving characteristics. In contrast, polysilicon has features that can be around 10cm 2 / V to about hundreds of cm 2 Relatively high electron mobility in the range of / V. However, a crystallization process is required to form polysilicon. Therefore, it is difficult to form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L27/12H01L21/77H01L27/32
CPCH01L27/1225H01L27/124H01L27/1259H01L29/41733H01L29/45H01L29/66969H01L29/78606H01L29/7869H01L29/78618H01L29/78696H10K59/00
Inventor 金载能崔新逸丁有光裵水斌金大颢金湘甲
Owner SAMSUNG DISPLAY CO LTD