Preparation method for thin film used for DBR

A thin-film preparation and thin-film technology, which is applied in the field of DBR thin-film preparation, can solve the problems of slow film rate and impact on production capacity, and achieve the effect of increasing production capacity and improving deposition efficiency

Active Publication Date: 2015-06-24
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0004] Based on this, it is necessary to provide a thin film preparation method for DBR in view of the slow growth rate of the thin film for DBR, which seriously affects the production capacity.

Method used

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  • Preparation method for thin film used for DBR
  • Preparation method for thin film used for DBR
  • Preparation method for thin film used for DBR

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Embodiment Construction

[0023] In order to make the technical solution of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] see figure 1 , a kind of film preparation method for DBR, comprises the steps:

[0025] S100, within the first preset time, after filling the process chamber with oxygen according to the first flow rate value, put the substrate into the process chamber;

[0026] S200, continue to fill the process chamber with oxygen according to the first flow rate value, and simultaneously deposit a thin film for DBR on the upper surface of the substrate for a second preset time;

[0027] S300, filling the process chamber with oxygen according to the second flow value, and simultaneously depositing a thin film for DBR on the upper surface of the substrate for a third preset time, wherein the second flow value is less than the first flow value;

[0028] S400, return to ...

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Abstract

The invention discloses a preparation method for a thin film used for a DBR. The method includes the step 100 of placing a substrate in a process cavity after oxygen is injected into the process cavity according to the first flow value within the first preset time, the step 200 of continuing to inject oxygen into the process cavity according to the first flow value and depositing the thin film used for the DBR on the upper surface of the substrate till the second preset time at the same time, the step 300 of injecting oxygen into the process cavity according to the second flow value and depositing the thin film used for the DBR on the upper surface of the substrate till the third preset time at the same time, and the step 400 of repeatedly executing the step 200 till the thickness of the thin film used for the DBR is the preset thickness, wherein the second flow value is smaller than the first flow value, and process gas is unceasingly injected into the process cavity according to the fourth flow value in the step 100, the step 200, the step 300 and the step 400. By changing the oxygen content in the process cavity, the deposition effect of the thin film used for the DBR is effectively improved, and therefore productivity is improved.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method for preparing a thin film for DBR. Background technique [0002] Light Emitting Diode (LED) has the advantages of energy saving, high brightness, long life, small size, fast response and easy integration, and is widely used in high-power lighting, automotive instrument display, large-area outdoor display, signal lights , and different fields such as general lighting. Among the LED chip parameters, brightness is an important parameter of LED performance, and improving LED luminous brightness is the focus of many enterprises and research institutions. There are many ways to improve the brightness of LEDs. Back reflection technology is an effective method to improve the brightness of LEDs. The light emitted by the LED junction area is emitted from the upper and lower surfaces, and the packaged LED emits light in one direction, so it is necessary to Light incident ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10C23C14/54C23C14/35C23C14/08C23C14/10
Inventor 王宽冒
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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