A kind of preparation method of anti-reflection film for three-junction solar cell for flexible space

A technology of anti-reflection film and solar cell, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as differences and lack of clear guiding significance for ion source parameters, increase aggregation density and firmness, and save heating and cooling , save the effect of the operation steps

Active Publication Date: 2020-03-27
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
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Problems solved by technology

The technical content involved in this patent cannot solve the technical problems mentioned above, mainly for the following reasons: 1. The main method of depositing the anti-reflection film of space solar cells is the electron beam thermal evaporation method, which is similar to that of intermediate frequency in terms of principle and operation. Magnetron sputtering makes a big difference
2. Since the ion source is divided into Hall ion source and Kaufman ion source, the patent does not specify the type and parameters of the ion source used, so the ion source parameters provided have no clear guiding significance

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  • A kind of preparation method of anti-reflection film for three-junction solar cell for flexible space
  • A kind of preparation method of anti-reflection film for three-junction solar cell for flexible space
  • A kind of preparation method of anti-reflection film for three-junction solar cell for flexible space

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Embodiment Construction

[0023] The implementation of this application will be described in detail below with the accompanying drawings and embodiments, so as to fully understand and implement the implementation process of how this application uses technical means to solve technical problems and achieve technical effects.

[0024] The invention adopts the anti-reflection film deposition technology combining electron beam thermal evaporation and ion source assisted deposition to prepare the anti-reflection film at normal temperature.

[0025] Ion Source Assisted Deposition (IAD) is an effective assisted deposition technology. When the film material is heated and evaporated, the film material particles are continuously bombarded by the energetic particles from the ion source on the surface of the substrate. Through momentum transfer, the bombardment particles provide sufficient kinetic energy for the film material particles, which improves the mobility of the film material particles, increases the aggregatio...

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Abstract

Disclosed is a preparation method of a three-junction solar cell antireflection film used for flexible space. In a normal temperature, the antireflection film is deposited on the surface of the solarcell by a combination of an electron beam thermal evaporation method and an ion source auxiliary deposition method; the ion source is a Mark II type hall ion source; and the hall ion source is 150-180V in positive electrode acceleration voltage and 5-6A in auxiliary particle beam. The preparation method has the beneficial effects of performing flexible solar cell antireflection film deposition inthe normal temperature, and ensuring that the antireflection film can satisfy the requirement of refractive index and has enough adhesion degree; and baking and heating are not needed, the operation steps of heating and cooling are omitted, and the production efficiency of the solar cell is improved.

Description

Technical field [0001] This application belongs to the technical field of optical film preparation, and specifically relates to a method for preparing an anti-reflection film for a triple junction solar cell for flexible space. Background technique [0002] The inversely grown lattice mismatched triple junction (IMM-3J) solar cell for flexible space is a new type of solar cell whose epitaxial structure is InGaP / GaAs / InGaAs, and the highest photoelectric conversion efficiency can reach 33%. This kind of solar cell needs to use MOCVD technology to complete the growth of each epitaxial layer in the order of InGaP, GaAs, InGaAs on a GaAs substrate, and then use semiconductor bonding technology to combine the outermost InGaAs epitaxial layer with the flexible metal layer Finally, the initial GaAs substrate is completely etched using wet etching technology to obtain a flexible epitaxial layer attached to the metal layer. The flexible epitaxial layer can be processed into flexible sola...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02168H01L31/1844Y02E10/544Y02P70/50
Inventor 孙希鹏李晓东铁剑锐杜永超梁存宝王鑫
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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