Process matching method, system and equipment for deep silicon etching

Abstract

The invention discloses a deep silicon etching process matching method, a deep silicon etching process matching system and deep silicon etching process equipment. The method comprises the following steps: a deposition matching step and an etching matching step, wherein the deposition matching step and the etching matching step are alternatively carried out; the deposition matching step comprises the following steps: detecting the first output power of a radio frequency power supply, calculating an adjusting amount of a first driving device according to the first output power, adjusting a first variable impedance element to a deposition matching position according to the adjusting amount of the first driving device and carrying out a deposition process on a wafer; and the etching matching step comprises the following steps: detecting the second output power of the radio frequency power supply, calculating an adjusting amount of a second driving device according to the second output power, adjusting a second variable impedance element to an etching matching position according to the adjusting amount of the second driving device and carrying out an etching process on the wafer. By virtue of the deep silicon etching process matching method, the deep silicon etching process matching system and the deep silicon etching process equipment, a phenomenon that the difference of technical parameters in a deposition and etching process is relatively large so that the time for carrying out impedance matching on the same variable impedance element is relatively long can be effectively avoided, and the stability of the process is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a deep silicon etching process matching method, system and equipment. Background technique [0002] With the wide application of MEMS (Modern Micro Electro Mechanical System, MicroElectroMechanicalSystem) and MEMS devices in the fields of automobiles and consumer electronics, and the broad prospects of TSV (Through Silicon Via etching, ThroughSiliconEtch) technology in the future packaging field, dry plasma silicon is deeply The etching process has gradually become one of the most widely used processes in the field of MEMS processing and TSV technology. [0003] The current mainstream silicon deep etching process is the Bosch process invented by a German company or optimized on the Bosch process. Its main features are: the entire etching process is repeated multiple times of a cycle unit, which includes etching steps and deposition steps, that is, the entire etching proce...

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a deep silicon etching process matching method, system and equipment for the long matching time of the variable impedance element in the matcher, which affects the process stability.

Images