Method for forming fin field effect transistor

Abstract

A forming method of a fin type field effect transistor comprises the following steps: forming adjacent first fin portion and second fin portion on a substrate; forming a grid electrode spanning the first fin portion and the second fin portion; sequentially forming a first protective layer, a first etching stop layer, a second protective layer and a second etching stop layer covering the grid electrode and the substrate from top to bottom; forming a patterned mask layer on the second etching stop layer, wherein the patterned mask layer covers the second etching stop layer of the second fin portion; removing the second etching stop layer on the first fin portion, then removing the patterned mask layer and the second protective layer on the first fin portion in a same technology; removing the first etching stop layer on the first fin portion by a first etching, then removing the first protective layer on the first fin portion by a second etching to expose the first fin portion; heating the substrate, injecting ions into the first fin portion on bilateral sides of the grid electrode to form a source electrode and a drain electrode; removing the first etching stop layer and the first protective layer covering the second fin portion. By the method of the fin type field effect transistor, the difficulty in manufacturing the transistor is reduced, and the performance of the transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the development of the semiconductor industry to lower technology nodes, the transition from planar CMOS transistors to three-dimensional FinFET (3D Fin Field Effect Transistor) device structures has gradually begun. In FinFET, the gate structure can control the channel from at least two sides, which has a much stronger control ability of the gate to the channel than planar MOSFET devices, and can well suppress the short channel effect. And compared with other devices, it has better compatibility with the existing integrated circuit production technology. [0003] The forming method of the fin field effect transistor in the prior art is as follows: [0004] refer to figure 1 , providing a semiconductor substrate 100 with raised first fins 101 and second fins 102 on the substrate 100 . The firs...

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Problems solved by technology

[0010] The problem solved by the present invention is the poor performance of fin field effect transistors in the prior art

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