Method for forming fin field effect transistor

Abstract

A forming method of a fin type field effect transistor comprises the following steps: providing a substrate having a first fin portion; forming a grid electrode spanning first fin portion, wherein the grid electrode partially covers the top and the lateral wall of the first fin portion; forming a protective layer covering the substrate and the grid electrode; forming a patterned mask layer on the protective layer, wherein the patterned mask layer exposes the protective layer at the first fin portion; removing the protective layer and the patterned mask layer covering the first fin portion in a same technology to form a patterned protective layer, wherein the patterned protective layer exposes the first fin portion and the grid electrode thereon; heating the substrate, then using the patterned protective layer as a mask to inject ions into the first fin portions on bilateral sides of the grid electrode, thereby forming a source electrode and a drain electrode; removing the patterned protective layer. By utilizing the method, the content of amorphous silicon in the ion injected first fin portion is reduced by a certain degree, or the amorphous silicon layer is thinned by a certain degree, accordingly improving the performance of the subsequently formed first fin type field effect transistor.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the development of the semiconductor industry to lower technology nodes, the transition from planar CMOS transistors to three-dimensional FinFET (3D Fin Field Effect Transistor) device structures has gradually begun. In FinFET, the gate structure can control the channel from at least two sides, which has a much stronger gate-to-channel control ability than planar MOSFET devices, and can well suppress the short-channel effect. And compared with other devices, it has better compatibility with the existing integrated circuit production technology. [0003] For the structure of the existing Fin Field Effect Transistor (FinFET), please refer to figure 1 , including: a semiconductor substrate 10; a buried oxide layer (BOX, Buried Oxide) 11 located on the semiconductor substrate 10; a raised structure ...

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the present invention is that the performance of fin field effect transistors in the prior art is relatively poor

Images