Laser annealing device and method

Abstract

The invention discloses a laser annealing device, comprising a solid laser source, a scanning unit, a supporting pedestal; a semiconductor film is annealed by means of laser irradiation; the laser annealing device further comprises a beam expanding unit, a light balancing unit, a condensing lens unit, a light splitting unit and a first light beam detector; a laser beam emitted by the laser source passes through the beam expanding unit, the light balancing unit and the condensing lens unit and arrives at the light splitting unit; the laser beam is split by the light splitting unit and then is respectively incident to the semiconductor film and the first light beam detector; and an optical distance from the light splitting unit to the first light beam detector is equal to that from the light splitting unit to the semiconductor film. The invention further discloses a laser annealing method; the dimension change of the laser beam irradiated on the surface of the semiconductor film is monitored real-timely, and the condensing lens unit moves in the direction of an optical axis on the basis of the detected value, so that the unchanged size of the laser beam irradiated on the semiconductor film in the annealing process is guaranteed, the annealing uniformity of the semiconductor film is guaranteed and the annealing quality of the semiconductor film is improved.

Description

technical field [0001] The invention relates to a laser annealing device and method. Background technique [0002] In recent years, the use of laser annealing technology for semiconductor films formed on insulating substrates such as glass has been widely carried out. The purpose is to crystallize or increase the crystallinity. In this way, after ion implantation, the doped impurities are arranged in an orderly manner with the atoms in the crystal, which improves the electrical properties of the material. [0003] In laser annealing, a pulsed light source provided from a laser light source is processed into a rectangular beam with an elongated cross-section using an optical processing system, and the semiconductor film on the substrate is relatively scanned in the direction of the short axis of the beam by the rectangular beam. Usually, the scanning of the rectangular beam is performed by moving the substrate. In addition, this scanning is carried out in such a manner that...

AI Technical Summary

Problems solved by technology

[0005] Using this laser annealing device to anneal the semiconductor film can only monitor the position change of the semiconductor film, but cannot monitor the direction of the optical path system and the change of the drift of the condenser lens unit, and cannot monitor the size of the beam irradiated on the semiconductor film in real time. The size of the beam cannot be guaranteed to be constant during the annealing process, so the annealing energy density cannot be guaranteed to be constant, and the annealing uniformity cannot be guaranteed.

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