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Method for automatically updating memory cells and semiconductor memory device using the same

A memory unit and storage device technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of high voltage, multiple costs, etc., and achieve the effect of reducing update voltage, reducing chip area and cost

Active Publication Date: 2017-11-28
ELITE SEMICON MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, since the charge pumping of the semiconductor storage device with the open bit line architecture needs to generate a higher voltage and has a larger chip area, the semiconductor storage device with the open bit line architecture needs to have more cost.

Method used

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  • Method for automatically updating memory cells and semiconductor memory device using the same
  • Method for automatically updating memory cells and semiconductor memory device using the same
  • Method for automatically updating memory cells and semiconductor memory device using the same

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Embodiment Construction

[0024] Hereinafter, the present invention will be described in detail by illustrating various embodiments of the invention by way of drawings. However, inventive concepts may be embodied in many different forms and should not be construed as limited to the illustrative embodiments set forth herein. Furthermore, the same reference numbers may be used to denote similar elements in the drawings.

[0025] [Embodiment of Automatically Updating Memory Cell Method]

[0026] Please refer to figure 2 , figure 2 It is a schematic diagram of a method for automatically updating memory cells used in a semiconductor storage device with an open bit line architecture provided by an embodiment of the present invention. For example, the semiconductor storage device may be a dynamic random access memory device, but the invention is not limited thereto. The method for automatically updating memory cells provided by the embodiments of the present invention can be applied to any type of semic...

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Abstract

The present invention provides a method for automatically updating memory cells. The method for automatically updating memory cells is especially suitable for a semiconductor storage device with an open bit line architecture, wherein the semiconductor storage device includes M storage banks, and each storage bank There are two special partitions with the same index value and other L partitions with different index values. In one cycle, two word lines of two special partitions with the same index value in one memory bank and (M-1) word lines in other (M-1) memory banks respectively will be selected, Each of the (M-1) word lines corresponds to one of the L partitions in the memory bank. Then, the memory cells of the selected word lines are updated.

Description

technical field [0001] The present invention relates to a semiconductor storage device, and in particular to a method for automatically updating memory cells applicable to the semiconductor storage device, and a semiconductor storage device using the method, wherein the semiconductor storage device has an open bit line ( open bit line) architecture. Background technique [0002] Nowadays, the technology of semiconductor storage devices is developing rapidly, and people often use some large-capacity semiconductor storage devices in daily life. Some semiconductor storage devices, such as dynamic random access memory (DRAM), the charge stored in the memory cells will gradually disappear due to the existence of leakage paths or the read operation of the semiconductor storage device, so it needs to update the memory cells . [0003] Please refer to Figure 1A , Figure 1A FIG. 1 is a schematic diagram of a conventional memory cell refresh method for a semiconductor memory devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/401
Inventor 黄明前
Owner ELITE SEMICON MEMORY TECH INC