A kind of automatic growth control method of 80-150kg gem single crystal

Abstract

The invention relates to a sapphire monocrystalline growth control method, and especially relates to an automatic growth control method of sapphire (80-150 kg) monocrystalline. The provided method solve the problem that sapphire cannot move along with the growth face main heat-dissipation zone in the thermal field main cooling area during the growth period. A two-section thermal field is utilized, the initial value and final value of R namely the upper heater / lower heater power decreasing speed ratio factor, and the automatic control time (T) are set, and the ratio factor R satisfies the formula: R(T)=Acos([pi]T / 600)+B through the PLC computation control during a predetermined time (T), and gradually changes from R1 to R2. By automatically controlling the upper heater / lower heater power decreasing speed ratio factor, the main heat-dissipation zone of a thermal filed can be adjusted to perfectly cooperate the movement of the crystal growth face, at the same time, the temperature gradient is modulated to adapt to the crystal growth, thus the crystal yield is high, and the crystal qualified rate is high. Because the main heat-dissipation zone always cooperates with the crystallization latent heat generating zone, the heat dissipation is successful, and the growth period is greatly reduced.

Description

Technical field [0001] The invention relates to a gem single crystal growth control method, in particular to an automatic growth control method of 80-150kg gem single crystal. Background technique [0002] The Kyropoulos method for growing sapphire single crystals is a widely used sapphire growth method due to its low cost, excellent crystal quality and high recognition in the industry. [0003] The sapphire single crystal is grown by the Kyrgyzstan method. During the growth process, the solid-liquid interface forms a downward convex growth surface. The growth surface will continuously generate crystallization latent heat due to supercooled crystallization. If the crystallization latent heat can be smoothly dissipated, the crystal will continue to grow at a certain rate If the latent heat of crystallization fails to dissipate smoothly, it will increase the local temperature and slow down or prevent the continuous growth of the crystal. At the same time, due to the crystal growth, t...

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of automatic growth control method of 80-150kg sapphire single crystal, which solves the problem that sapphire single crystal growth cannot be achieved in the main cooling area of ​​the thermal field. The problem of moving the main heat dissipation area with the growth surface