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Manufacturing method of semiconductor device

A semiconductor and device technology, applied in the semiconductor field, can solve the problems of complex manufacturing process and high manufacturing cost of SOI substrate, and achieve the effect of low cost and easy manufacturing

Active Publication Date: 2015-07-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing cost of SOI substrate is high, and the manufacturing process is complicated

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a manufacturing method of a semiconductor device. The method comprises the steps of forming a fin on a first side of a semiconductor substrate, forming an isolation layer on the first side of the substrate, forming a gate stack intersected with the fin on the isolation layer, continuing a front end technology and a rear end technology on the first side of the substrate, thinning the substrate from a second side, opposite to the first side, of the substrate, performing oxidization to allow at least one part of the fin buried into the isolation layer and the substrate below the isolation layer to be changed into insulating oxides, and forming a supporting substrate on the second side of the oxidized substrate.

Description

technical field [0001] The present application relates to the field of semiconductors, and more particularly, to a method of manufacturing a semiconductor device including fins. Background technique [0002] With the increasing integration density of semiconductor devices, FinFET (Fin Field Effect Transistor) has attracted much attention due to its good electrical performance, scalability and compatibility with conventional manufacturing processes. figure 1 A perspective view of an example FinFET is shown in . Such as figure 1 As shown, the FinFET includes: a bulk semiconductor substrate 101; a fin 102 formed by a part of the substrate 101 on the substrate 101; a gate electrode 103 intersecting the fin 102, and a gate dielectric is provided between the gate electrode 103 and the fin 102 layer 104; and isolation layer 105. In this FinFET, under the control of the gate electrode 103, a conductive channel can be generated in the fin 102, specifically in the three side walls ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
CPCH01L21/7624H01L29/66795
Inventor 钟汇才罗军
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI