Trench-type power metal oxide semiconductor field effect transistor and manufacturing method thereof

A technology of metal oxide half field and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the reduction of breakdown voltage and the impact on the withstand voltage characteristics of transistors, and achieve improved breakdown voltage and low conduction The effect of resistance

Inactive Publication Date: 2015-07-15
SUPER GROUP SEMICON
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  • Abstract
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  • Application Information

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Problems solved by technology

The on-resistance Rds of power metal oxide field effect transistors is usually related to the thickness of the drift region. Reducing the thickness of the drift region can reduce the conduction resistance Rds, but reducing the thickness of the drift region will lead to a decrease in the breakdown voltage and affect the withstand voltage characteristics of the transistor.

Method used

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  • Trench-type power metal oxide semiconductor field effect transistor and manufacturing method thereof
  • Trench-type power metal oxide semiconductor field effect transistor and manufacturing method thereof
  • Trench-type power metal oxide semiconductor field effect transistor and manufacturing method thereof

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Embodiment Construction

[0034] Hereinafter, the present invention will be described in detail by illustrating embodiments of the present invention by means of drawings, and the same reference numerals in the drawings may be used to denote similar elements. The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as: (up), (down), (front), (back), (left), (right), etc., are only referring to the directions of the drawings. Accordingly, the directional terms used are illustrative, not limiting of the patent. Moreover, in the following embodiments, the same reference numerals are used to denote the same or similar elements.

[0035] Figure 1A ~ Figure 1H It is a schematic diagram of the manufacturing method of the trench power metal oxide semiconductor field effect transis...

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Abstract

The invention discloses a trench-type power metal oxide semiconductor field effect transistor and a manufacturing method thereof. An embedded oxide layer is formed in an epitaxial layer of the trench-type power metal oxide semiconductor field effect transistor and located below a body region, and thus, longitudinal electric field distribution is changed, disruptive voltage of the transistor is improved, and low on-resistance can be obtained. According to the trench-type power metal oxide semiconductor field effect transistor and the manufacturing method thereof, the embedded oxide layer formed in the epitaxial layer is used for changing the longitudinal electric field distribution, the disruptive voltage of an element is thus improved, silicon limitation can be broken, and low on-resistance can be obtained.

Description

technical field [0001] The invention relates to a power metal-oxide-semiconductor field-effect transistor, in particular to a trench-type power metal-oxide-semiconductor field-effect transistor with low conduction resistance and high breakdown voltage and a manufacturing method thereof. Background technique [0002] Power metal oxide semiconductor field transistor (Power Metal Oxide Semiconductor Field Transistor, Power MOSFET) is a voltage control element, mainly has two structures, horizontal and vertical, which has fast switching speed, good high-frequency characteristics, and high input impedance And the advantages of small driving power. Power metal oxide field effect transistors are widely used in switching elements of power devices, such as power supplies, rectifiers, or low-voltage motor controllers. Today's power MOS field effect transistors mostly adopt a vertical structure design to increase device density. [0003] The operating loss of power metal oxide field ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/06H01L29/4236H01L29/66477H01L29/78
Inventor 许修文
Owner SUPER GROUP SEMICON
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