A kind of phase-change memory cell and its manufacturing method
A technology of phase change storage and manufacturing method, which is applied in the field of phase change storage unit and its production, which can solve the problems of large phase change area and high power consumption of devices, and achieve the reduction of phase change area, reduction of device power consumption, and minimum contact surface effect
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Embodiment 1
[0086] The invention provides a method for manufacturing a phase-change memory unit, comprising the following steps:
[0087] Step S1 : providing a substrate, forming at least one lower electrode embedded in the substrate 1 and exposing the upper surface.
[0088] Specifically, the substrate is a conventional semiconductor substrate, such as Si, Ge and the like. The method for preparing the lower electrode may be sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition and any of the atomic layer deposition methods. The material of the lower electrode 2 can be any one of single metal materials W, Pt, Au, Ti, Al, Ag, Cu and Ni, or an alloy material composed of at least two single metal materials, or the Nitride or oxide of the above-mentioned single metal materials.
[0089] As an example, in this embodiment, a CVD met...
Embodiment 2
[0125] The present invention also provides a phase change memory unit, such as Figure 20 or Figure 21 As shown in the dotted box area in , the phase change memory unit includes:
[0126] At least one lower electrode 2 embedded in the substrate 1 ( Figure 20 and Figure 21 The lower electrode 2 cannot be seen in the section shown, which can be referred to in another section Figure 18 );
[0127] A blade-shaped heating electrode 401 connected above the lower electrode 2;
[0128] The blade-shaped phase-change material structure 101 connected above the blade-shaped heating electrode 401;
[0129] connected to the upper electrode 15 above the phase change material structure 101 .
[0130] Specifically, the structure of the blade-shaped phase-change material is "|" ( Figure 20 ) or "L" type ( Figure 21 ); the width of the bottom of the "L"-shaped blade-shaped phase-change material structure ranges from 5 to 50 nanometers.
[0131] Specifically, the projections of the...
Embodiment 3
[0136] The present invention also provides a phase-change memory using the phase-change memory unit described in the second embodiment.
[0137] Specifically, in the phase change memory, two adjacent blade-shaped heating electrodes are separated by an insulating layer; two adjacent blade-shaped phase-change material structures are separated by an insulating layer.
[0138] Specifically, in the phase change memory, the distance between two adjacent blade-shaped heating electrodes is 5-90 nanometers; the distance between two adjacent blade-shaped phase-change material structures is 5-140 nanometers.
[0139] In the phase-change memory of the present invention, the phase-change memory unit adopts a blade-shaped heating electrode and a blade-shaped phase-change material structure, and the blade-shaped heating electrode and the blade-shaped phase-change material structure cross-contact each other, which can effectively reduce the phase change of the device unit. variable area purpo...
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Abstract
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