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Metal-nitride thermistor material, manufacturing method therefor, and film-type thermistor sensor

A technology for thermistors and manufacturing methods, applied in thermistors, resistance manufacturing, metal material coating technology, etc., can solve the problems of no heat resistance, unclear thermal reliability of nitride-based materials, and unrealizable problems , to achieve the effect of high heat resistance

Active Publication Date: 2015-07-22
MITSUBISHI MATERIALS CORP
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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of the Ta-Al-N-based material, but there is no description about heat resistance, and the thermal stability of the nitride-based material is reliable. gender ambiguity
[0012] In addition, the Cr-N-M-based material of Patent Document 4 is a material with a small B constant of 500 or less, and if heat treatment is not performed at 200°C to 1000°C, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

Method used

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  • Metal-nitride thermistor material, manufacturing method therefor, and film-type thermistor sensor
  • Metal-nitride thermistor material, manufacturing method therefor, and film-type thermistor sensor
  • Metal-nitride thermistor material, manufacturing method therefor, and film-type thermistor sensor

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Embodiment

[0082] Next, regarding the metal nitride material for thermistors and its manufacturing method and thin-film thermistor sensor according to the present invention, refer to Figure 4 to Figure 14 , and specifically describe the results of evaluation based on the examples prepared according to the above-mentioned embodiment.

[0083]

[0084] As examples and comparative examples of the present invention, the following Figure 4 Element 121 is shown for film evaluation.

[0085] First, by reactive sputtering method, using Ti-Cr-Al composite targets with various composition ratios, on the Si wafer with thermal oxide film to be the Si substrate S, each layer shown in Table 1 was formed with a thickness of 500 nm. The thin film thermistor part 3 of a metal nitride material for a thermistor formed with a composition ratio. The sputtering condition at this time is the ultimate vacuum degree: 5×10 -6 Pa, sputtering pressure: 0.1-1Pa, target input power (output power): 100-500W, an...

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Abstract

Provided is a metal-nitride thermistor material that has a high heat tolerance, is highly reliable, and can be used to form a film or the like directly, without firing. Also provided are a method for manufacturing said metal-nitride thermistor material and a film-type thermistor sensor. This metal-nitride material for use in a thermistor comprises a metal nitride that can be represented by the general formula (Ti1−wCrw)xAlyNz (with 0.0 < w < 1.0, 0.70 ≤ y / (x+y) ≤ 0.95, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), and said metal-nitride material has a single-phase wurtzite hexagonal crystal structure.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<≤0...

Claims

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Application Information

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IPC IPC(8): C23C14/06H01C7/04
CPCC23C14/586H01C7/042H01C17/06513C23C14/0641C23C14/5826C23C14/0036C23C14/3414G01K7/22H01C7/008
Inventor 藤田利晃田中宽长友宪昭
Owner MITSUBISHI MATERIALS CORP
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