A resistive variable memory write drive circuit with self-adaptive pulse width and amplitude

Abstract

The invention discloses a resistive variable memory write drive circuit with self-adaptive pulse width and amplitude. The circuit includes an adaptive pulse width adjustment module, a MOS transistor 2 , Cell current real-time detection module, 1T1R storage unit, the first data selector and the second data selector, in the process of executing the write operation, the MOS transistor T 2 The current flowing through the 1T1R storage unit is sampled, and the Cell current real-time detection module judges whether the write operation is completed by detecting the change of this current. If the write operation is completed, it changes the output of the comparator in the adaptive adjustment pulse width module, and then turns off the self Adapt to adjust the dynamic pulse width and amplitude signal generator in the pulse width module, avoid overwriting, and realize adaptive adjustment of the write signal pulse width and amplitude. The invention has the characteristic of self-adaptively adjusting the write pulse width and amplitude for different storage units, ensures the writing speed, improves the correct rate of writing, and greatly reduces the power consumption of the writing operation.

Description

Technical field [0001] The present invention relates to the technical field of information storage, in particular to a resistive random access memory write drive circuit with adaptive pulse width amplitude for resistive random access memory. Background technique [0002] Resistive random access memory is a type of non-volatile memory that has been studied very hot in recent years. It is the most promising next-generation non-volatile memory to replace Flash. It also has high speed, high density, non-volatility, and high erase and write cycles. Notable characteristics. The core mechanism of the memory cell is that the resistance of the resistive material can be changed by an external voltage. It can perform a total of four types of operations: FORM (initialization) activates the resistive material so that it can be written, and at the same time becomes low resistance; SET (set 1) changes the resistive material from high resistance to low resistance; RESET (set 0) Change the resi...

AI Technical Summary

Problems solved by technology

In order to ensure that all cells can be SET successfully, the traditional SET pulse width must be wide enough to ensure that the slowest Cell can also be SET, so many Fast Cells will be SET first, and because these Cells are SET to R 低 , so for Fast Cell, the SET voltage not only does not help the SET process during a long period of SET pulses, but because the Cell has become low resistance, it leads to a "very large" current and increases power consumption

For the RESET process, since the SET process may be introduced in the RESET process, we use the Write_Verify_Write method to perform RESET. However, due to the existence of Fast Cells as mentioned above, some Cells will be reset first, so in the pulse Before the end, these Cells will have another SET process, resulting in RESET failure

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