Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A lithography illuminator that is telecentric in both directions

An illuminator and concentrator technology, applied in the field of illuminators, can solve the problems of increasing sensitivity, complicated adjustment of illuminators, etc., and achieve the effect of increasing sharpness and low sensitivity

Inactive Publication Date: 2017-12-08
SAGEM DEFENSE SECURITE SA +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this point, the larger aperture limits the depth of field of the microlens array L3, which increases the sensitivity to defocusing of the shutter relative to the object-side focal plane of the array L3
The adjustment of the illuminator thus becomes more complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A lithography illuminator that is telecentric in both directions
  • A lithography illuminator that is telecentric in both directions
  • A lithography illuminator that is telecentric in both directions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] General description of the illuminator

[0051] Figure 2a , 2b and 2c schematically show a part of an illuminator according to the invention.

[0052] exist Figure 2a In, the illuminator comprises: a light source 1' of a light beam 10, such as a laser light source; a diffractive element 1, which is located at the output of the light source 1'; and a zoomer 2 (these elements are not shown in Figure 2b with Figure 2c middle).

[0053] It further comprises an afocal system L1L2, at the output of the zoomer 2, consisting of a first and a second microlens array L1 and L2.

[0054] Beam 10 comprises a plurality of sub-beams 100 at the output of afocal system L1L2, forming a sub-exit pupil of afocal system L1L2.

[0055] The illuminator comprises a shutter 3, shown as two grids 31, 32, and located at the exit pupil of the afocal system L1L2.

[0056] The light homogenizing system 4 is located downstream of the shutter 3, so that the shutter 3 is located on the objec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a lithography irradiation device, comprising: a beam light source; a light concentrator (5); a light homogenization system (4), which includes at least one microlens array (L3, L4), arranged on the light concentrator (5 ), so that the image-side focal plane of the light homogenizing system is located on the object-side focal plane of the light collector; the shutter (3), which is arranged on the object-side focal plane of the light homogenizing system, and wherein the light homogenizing system includes two Two microlens arrays (L3, L4), the spacing of the two microlens arrays and the arrangement and orientation of their microlenses are designed so that, in two directions (X, Y) perpendicular to the optical axis, light homogenization The system has a merged image space focal plane and a merged object space focal plane. The invention also relates to a lithographic apparatus comprising such an illuminator.

Description

technical field [0001] The present invention relates to an illuminator of a lithographic apparatus, and to such a lithographic apparatus. Background technique [0002] Photolithography is a technique for manufacturing semiconductor devices by using electromagnetic radiation to create fine patterns on the semiconductor devices. For this purpose, an illuminator of a lithographic apparatus illuminates a mask, the image of which is projected onto a semiconductor wafer (aka "wafer"). [0003] refer to figure 1 , the known illuminator generally comprises a diffractive optical element (also called DOE), which is illuminated by an illumination source 1'. [0004] The radiation source 1' is for example a laser source. [0005] Element 1 may be any element commonly used to generate diffraction, such as a two-dimensional array of spherical microlenses, a Fresnel lens, a diffraction grating, and the like. This element acts as an optical scattering device and has the primary function...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B27/09
CPCG02B27/0927G02B27/0961G03F7/70066G03F7/70075G03F7/7015
Inventor B·普兰尚R·梅西耶伊捷
Owner SAGEM DEFENSE SECURITE SA
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com