Semiconductor structure and method for forming same

Abstract

The invention provides a semiconductor structure and a method for forming the same. Through forming a stopping layer on the edge region of a semiconductor substrate, monocrystal cannot grow on the edge region of the semiconductor substrate in an epitaxial growth process, thereby ensuring crystal defects of the edge of the semiconductor substrate, caused by chamfering quality, would not be amplified to form gaps, cracks, edge breakage, and even fragments in epitaxy, and epitaxy crown and other abnormity would not occur, thereby solving problems of photoresist stacking, bad spin coating, breezing exposure and other photoresis abnormity in spin coating and exposure processes.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and relates to a semiconductor structure and a forming method thereof. Background technique [0002] The substrate used in integrated circuit manufacturing, after being cut from a single crystal rod into a silicon wafer substrate with a specific thickness, there are mechanical stress and thermal stress on the surface of the silicon wafer, which is very easy to form abnormalities such as damage and slip dislocation, usually Need to go through a rigorous post-processing process to improve. At the edge of the silicon wafer, the stress and damage of the silicon wafer are particularly prominent. It is necessary to use a grinding wheel with a specific blade profile to grind the edge of the cut silicon wafer to form a specific angle and shape on the edge of the silicon wafer, and then make the edge of the silicon wafer The mechanical stress is released, reducing damage an...

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of light defects in the coating and exposure process, because the crystal defects that exist due to the quality of chamfering will not be enlarged to form gaps, cracks, chipping or even fragments during epitaxy, and there will be no abnormalities such as epitaxial crowns. Abnormal photolithography problems such as resist accumulation, poor uniformity, and exposure blur

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