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Method for Removing Movable Ionic Charges in Chips

A technology of ionic charge and chips, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as device failure, achieve the effect of improving service life and eliminating movable ionic charges

Active Publication Date: 2017-09-15
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the pollution of mobile ionic charges causes the parameters of the device to change slowly, the parameters of the integrated circuit exceed their limit values, resulting in long-term failure of the device

Method used

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  • Method for Removing Movable Ionic Charges in Chips
  • Method for Removing Movable Ionic Charges in Chips
  • Method for Removing Movable Ionic Charges in Chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] figure 2 It is a schematic diagram of a method for removing mobile ion charges in a chip provided by Embodiment 1 of the present invention. like figure 2 As shown, the method includes the following steps:

[0020] 101. Baking the chip formed with the silicon dioxide layer for a preset time at a set temperature, so that mobile ionic charges are gathered on the upper surface of the silicon dioxide layer.

[0021] Specifically, SiO will be formed with 2 The chip of the first layer is placed in a furnace tube (Furnace) or an oven (Oven), and is baked according to a preset temperature. Wherein, the set temperature is 150°C-450°C. The preset time is more than one hour. Generally, the higher the set temperature, the shorter the baking time is required, and the lower the set temperature, the longer the baking time is required.

[0022] After baking for a preset time at a set temperature, the mobile ionic charges in the chip will be on the SiO 2 layer redistribution. G...

Embodiment 2

[0027] Figure 5 It is a schematic diagram of a method for removing mobile ion charges in a chip provided by Embodiment 2 of the present invention. like Figure 5 As shown, the method includes the following steps:

[0028] 201. Baking the chip formed with the silicon dioxide layer for a preset time at a set temperature, so that mobile ionic charges are gathered on the upper surface of the silicon dioxide layer.

[0029] For the specific process, please refer to step 101 in the first embodiment, and the distribution diagram of the mobile ion charge in the chip after the first baking treatment is shown in image 3 shown.

[0030] 202. In the process of baking the chip formed with the silicon dioxide layer for a preset period of time at a set temperature, the mobile ionic charges used to eliminate the interface between the silicon dioxide layer and the silicon substrate are passed through gas.

[0031] During the baking process, a large number of mobile ionic charges in the ...

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PUM

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Abstract

The invention provides a method for removing mobile ion charges in a chip. The chip formed with the silicon dioxide layer is baked for a preset time at a set temperature, and the chip is rinsed according to a preset peeling thickness to peel off the silicon dioxide layer rich in mobile ionic charge. In the present invention, the mobile ion charge in the chip is redistributed in the silicon dioxide (SiO2) layer during the baking process, and the mobile ion charge will accelerate accumulation on the upper surface of the SiO2 layer according to its own motion characteristics, and then The upper surface rich in mobile ionic charges is stripped from the SiO2 layer by rinsing, which eliminates the mobile ionic charges in the chip and improves the service life of the chip.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor integrated circuits, in particular to a method for removing movable ion charges in chips. Background technique [0002] Some mobile ionic charges will inevitably be mixed in the manufacturing process of semiconductor integrated circuits, such as chemical agents, process equipment, and human sweat, which may be the source of mobile ionic charges. The mobile ionic charge is a kind of impurity pollution existing in the chip, and its main components are alkali metal ions, such as sodium (Na) ions and potassium (K) ions. [0003] Movable ionic charges will move in the silicon dioxide layer under the action of electric field or temperature, thereby causing the drift of device parameters, such as the threshold voltage and high voltage of Metal-Oxid-Semiconductor (MOS) devices. device breakdown voltage, etc. When the pollution of mobile ionic charges causes the parameters of the device to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/322H01L21/02
Inventor 石金成潘光燃高振杰王琨由云鹏张建湘
Owner FOUNDER MICROELECTRONICS INT