Mask plate, manufacturing method thereof, and exposure apparatus

Abstract

The present invention relates to a mask plate, a manufacturing method thereof, and an exposure apparatus. The mask plate includes a substrate, a first mask pattern formed on an upper surface of the substrate and a second mask pattern formed on a lower surface of the substrate, respectively; the first mask pattern includes a light transmittance region and a light-proof region, the second mask pattern includes a light transmittance region and a light-proof region, and a projection of the light transmittance region of the first mask pattern in a plane where the second mask pattern is located is outside the light-proof region of the second mask pattern; and the light-proof region of the second mask pattern can shield at least part of diffractive light rays at the first mask pattern, preventing the same from emitting from the light transmittance region of the second mask pattern. The abovementioned mask plate can enable a pattern of an exposed region of an photoresist approaching the pattern on the mask plate, thereby enabling the developed pattern to be more exquisite, which contributes to exposure process refinements.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a mask plate, a preparation method thereof, and exposure equipment. Background technique [0002] In the field of display technology, structures such as thin film transistors, various signal lines, and pixel electrodes in display devices are prepared by photolithography. The photolithography process generally includes steps such as deposition→coating photoresist→exposure→development→etching→stripping off the remaining photoresist, wherein the exposure is performed by an exposure device. [0003] figure 1 shows the mask used by the existing exposure equipment, such as figure 1 As shown, the mask plate 1 includes a base substrate 10, and one surface of the base substrate 10 (such as figure 1 An opaque layer 11 is formed on the lower surface of the base substrate 10), and the opaque layer 11 covers a part of the base substrate 10, so that the mask plate 1 has a correspon...

AI Technical Summary

Problems solved by technology

Specifically, when the photoresist used in the exposure process is a negative photoresist, the exposure area corresponds to the width of the pattern line, and a larger exposure area will cause the line width of the pattern to be smaller (reduced to the light-transmitting area b width); when the photoresist used in the exposure process is a positive photoresist, the exposure area corresponds to the interval width of the pattern, and the larger exposure area will cause the pattern interval width to be smaller (reduced to the width of the light-transmitting area b )

It can be seen that the above-mentioned mask plate is not conducive to the refinement of the exposure process, thereby limiting the thinning of thin film transistors and various signal lines in the display device, and is not conducive to improving the pixel density of the display device.

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