semiconductor storage device

Abstract

The invention provides a semiconductor storing device. A flash memory of the invention comprises a page buffer or a sensing circuit and a high-speed buffer register. The page buffer or sensing circuit comprises a volatile storage element of data capable of keeping the size corresponding to the page of a storage array. The high-speed buffer register comprises a nonvolatile storage element of the data capable of keeping the size corresponding to the page of the storage array. The page buffer or sensing circuit comprises a sensing circuit, a data register and a transmission grid. Data transmission and receiving can be performed between the data register and an input-output buffer. The high-speed buffer register comprises a resistive random access memory (RRAM). The RRAM can receive or transmit data from or to the input-output buffer through the transmission grid. The RRAM also can receive or transmit data from or to the data register through the transmission grid.

Description

Technical field [0001] The present invention relates to a semiconductor storage device such as a NAND flash memory, and more particularly to a page buffer using non-volatile memory. Background technique [0002] As we all know, NAND-type flash memory includes: a memory cell array, which includes a NAND string formed by connecting a plurality of memory cells in series; and a page buffer, which is connected to a bit line of the memory array. The page buffer holds the data transferred from the selected page of the storage array, or holds the data written to the selected page. A flash memory is disclosed, in which the page buffer includes a data register and a cache register to achieve high-speed reading and writing (Patent Document 1). [0003] [Background Technical Literature] [0004] [Patent Literature] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2013-118031 [0006] In the conventional NAND-type flash memory, the page buffer that holds the page data read from the memo...

AI Technical Summary

Problems solved by technology

[0011] First, if the page buffer is configured with a CMOS latch circuit, etc., the area occupied will increase, and as a result, the miniaturization of the flash memory cannot be achieved.

[0012] Second, because the page buffer is volatile, the data disappears if power is removed

In other words, it means that in the case of data smaller than 512 bytes, even if the same page is programmed continuously, the entire page cannot be programmed

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