Inorganic barrier layers

A technology of exciton blocking layer and inorganic materials, which can be used in organic semiconductor devices, radiotherapy, treatment, etc., and can solve problems such as unsatisfactory device efficiency

Inactive Publication Date: 2015-08-19
MERCK PATENT GMBH
View PDF13 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, the efficiency of said devices emitting UV radiation in the UV region is still not satisfactory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic barrier layers
  • Inorganic barrier layers
  • Inorganic barrier layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0134] Material

[0135] The following two emitters E1 and E2 are used.

[0136]

[0137] The synthesis of E1 is disclosed in EP 329752 and the synthesis of E2 in EP 440082.

[0138] The host used was polystyrene (PS) from Fluka (81414, Mw 500000, Mn 490000). BM1 and BM2 are ZrO x and HfO x precursor material (x≤2). The synthesis of the precursors was performed according to WO 2010 / 078907.

Embodiment 2

[0140] Solutions and compositions comprising matrix material and emitter

[0141] Solutions as outlined in Table 1 were prepared as follows: First, the host and emitter mixture was dissolved in 10 ml toluene and stirred until the solution was clear. The solution was filtered using a Millipore Millex LS hydrophobic PTFE 5.0 μm filter.

[0142] Table 1:

[0143]

[0144] These solutions are used to make the emissive layers of OLEDs. The corresponding solid compositions can be obtained by evaporating the solvent from the solutions. This can be used to prepare additional formulations.

Embodiment 3

[0146] Fabrication of organic electroluminescent devices

[0147] OLED Reference 1 and Reference 2 have the following structure: ITO / PEDOT / EML / cathode. These two OLEDs were used as reference examples. They were produced according to the following steps using the corresponding solutions from Table 1:

[0148] 1. 80nm PEDOT (Clevios TM P VP AI 4083) was applied to an ITO-coated glass substrate. It was then dried by heating at 120° C. for 10 minutes in a clean room.

[0149] 2. Apply a 100 nm emissive layer by spin coating the solutions according to Table 1 in an Ar glove box.

[0150] 3. Dry the device by heating at 180°C for 10 minutes.

[0151] 4. Apply Ba / Al cathode (3nm+150nm) by vapor deposition.

[0152] 5. Package the device.

[0153]OLED1-OLED3 are devices according to the invention having the following structure: ITO / BL / EML / cathode, where BL stands for exciton blocking layer. They were produced using the solutions from Table 1 by the method described for OLED-Re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to electroluminescent devices containing materials having a wide band gap and to the use thereof.

Description

technical field [0001] The invention relates to organic electroluminescent devices comprising inorganic barrier layers and their use. Background technique [0002] Structures of organic electroluminescent devices (for example organic light-emitting diodes—OLEDs) in which organic semiconductors are used as functional materials are described, for example, in US 4539507, US 5151629, EP 0676461 and WO 98 / 27136. In addition to fluorescent emitters, the emissive materials used here are increasingly organometallic complexes, which exhibit phosphorescence (M.A. Baldo et al., Appl. Phys. Lett. (Applied Physics Letters) 1999,75,4 ~6). For quantum mechanical reasons, up to four times higher energy and power efficiencies can be achieved using organometallic compounds as phosphorescent emitters. In general, in the case of OLEDs exhibiting singlet emission as well as in the case of OLEDs exhibiting triplet emission, improvements are still required, especially with regard to efficiency, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52
CPCH01L51/5096H01L51/52H10K50/18H10K50/80H10K71/00H10K50/11H10K50/13H10K50/16H10K50/81H10K50/82H10K50/171H10K85/60H10K85/111H10K2102/00A61N5/0616A61N2005/0653A61N2005/0661
Inventor 潘君友安德里亚斯·克吕什奇
Owner MERCK PATENT GMBH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap