A 30°parallel lens for ion implanter

Abstract

The invention relates to a 30° parallel lens for an ion implanter, comprising an upper magnetic pole and a lower magnetic pole which are symmetrically installed up and down with the same structure and size, an upper magnetic yoke is arranged above the upper magnetic pole, and a lower magnetic pole is arranged below the lower magnetic pole. The top surface of the upper magnetic pole is connected to the bottom surface of the upper magnetic yoke, and the bottom surface of the lower magnetic pole is connected to the top surface of the lower magnetic yoke; the parallel lens is also provided with two intermediate magnetic yokes, the tops of the two intermediate magnetic yokes are It is connected with the bottom surface of the upper yoke, and the bottom ends of the two middle yokes are connected with the top surface of the lower yoke, and the upper magnetic pole and the lower magnetic pole are placed between the two middle yokes; the lower magnetic pole surface of the upper magnetic pole is connected with the The edge of the upper magnetic pole surface of the lower magnetic pole is composed of multiple arcs. The magnetic pole surface of the invention has a reasonable shape, can keep the ion beam implantation angle consistent, ensure uniformity and repeatability, and can prevent incident ions from producing channeling effects on the crystal lattice structure of the semiconductor wafer, and can also make it produce uniform required ditch.

Description

technical field [0001] The invention relates to an ion implanter used in the semiconductor material ion implantation process in the field of semiconductor device manufacturing, in particular to a 30° parallel lens for the ion implanter. Background technique [0002] With the development of semiconductor integrated circuit manufacturing technology, the integration level is getting higher and higher, the circuit scale is getting bigger and bigger, and the size of individual components in the circuit is getting smaller and smaller, which puts forward higher requirements for semiconductor process equipment. As one of the key equipment in the semiconductor ion doping process line, the ion implanter also puts forward high requirements. Especially the requirements for energy pollution and ion pollution, the requirements for uniformity and repeatability, and the requirements for directional beam implantation are getting higher and higher. On the other hand, in order to improve prod...

AI Technical Summary

Problems solved by technology

[0005] Commonly used parallel lenses, the shape design of the magnetic pole surface is not reasonable enough to meet the beam parallelism requirements of higher technology. At the same time, the design of the yoke and coil is not optimized, and there are problems such as complex processing, heavy weight, high cost, and difficult assembly.

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