Flip LED chip and preparing method thereof

An LED chip and flip-chip technology, applied in the field of light sources, can solve the problems of low light-emitting efficiency of flip-chip LED chips and affect the brightness of flip-chip LED chips, and achieve the effect of improving light-emitting efficiency and brightness.

Inactive Publication Date: 2015-09-09
FOSHAN NATIONSTAR SEMICON
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a flip-chip LED chip and its manufacturing method to solve the low light extraction efficiency of the flip-chip LED chip and the influence of the flip-chip LED chip due to the total reflection of light at the transparent substrate in the prior art. The problem of installing LED chip brightness

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  • Flip LED chip and preparing method thereof
  • Flip LED chip and preparing method thereof
  • Flip LED chip and preparing method thereof

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0040] One embodiment of the present invention provides a method for manufacturing a flip-chip LED chip, the flow chart of the method is as follows figure 2 shown, including:

[0041] S201: Making semi-finished products of flip-chip LED chips;

[0042] Wherein, the semi-finished product includes at least a transparent substrate and a GaN epitaxial layer on one side of the transparent substrate, and the GaN epitaxial layer includes an N-type GaN layer, an act...

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Abstract

The invention provides a flip LED chip and a preparing method thereof. The method comprises the steps of: preparing a semi-finished product of the flip LED chip, wherein the semi-finished product at least comprises a transparent substrate and a gallium nitride epitaxial layer arranged at one side of the transparent substrate, and the gallium nitride epitaxial layer comprises an N type gallium nitride layer, an active layer and a P type gallium nitride layer; fixing the semi-finished product to a cutting bench, wherein the side of the transparent substrate is opposite to the cutting bench; and performing graphical cutting on the transparent substrate to enable the surface of the transparent substrate to be uneven. In this way, the total reflection phenomenon of the surface, in contact with air of the transparent substrate can be partially eliminated, the light extraction efficiency of the flip LED chip is further increased, and the brightness of the flip LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of light sources, and more specifically, to a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode), as a new type of green lighting source, is widely used in indicator lights of electronic products, backlights of LCD displays, transportation, etc. Various fields such as signal lights and daily lighting. [0003] Existing LED chips include front-mount LED chips and flip-chip LED chips. refer to figure 1 , an existing flip-chip LED chip includes a substrate 1, a reflective layer 2 located on one side of the substrate 1, a P-surface electrode 3, a P-type gallium nitride layer 4, an active layer 5, an N-type gallium nitride layer 6, N surface electrode 7 and transparent substrate 8 . After the current is applied to the P-side electrode 3 and the N-side electrode 7, a part of the light emitted by the active layer 5 will pass thro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/54H01L21/304
CPCH01L33/54H01L21/3043
Inventor 徐亮郑洪仿
Owner FOSHAN NATIONSTAR SEMICON
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