In-line plasma CVD device

Abstract

Provided is an in-line plasma CVD device (100) capable of performing a deposition process at a high production efficiency while maintaining stable deposition conditions, without spending time and energy on cleaning and the like even when in use for a long time. This plasma CVD device (100) is equipped with a deposition chamber (1) and load-lock chambers (20, 30) which are separate from the deposition chamber (1). The device (100) is of the in-line-type for conveying a substrate between these chambers and producing a film on the substrate. The deposition chamber (1) is equipped with a vacuum chamber (2), a vacuum exhaust means (3) for discharging the air inside the vacuum chamber (2), a gas supply unit (9) for supplying a starting-material gas into the vacuum chamber (2), and a plasma generation power source (10) for generating plasma inside the vacuum chamber (2). Substrates in the deposition chamber (1) are divided into a first group (18) connected to one pole of the plasma generation power source (10), and a second group (19) connected to the other pole of the plasma generation power source (10). The plasma is produced between the first group (18) and the second group (19) which have different polarities from one another.

Description

technical field [0001] The present invention relates to a plasma chemical vapor deposition device for forming a chemical vapor deposition film on a substrate, and in particular to a continuous plasma chemical vapor deposition device with high production efficiency while maintaining stable film forming conditions. Background technique [0002] For automotive engine parts such as piston rings, good wear resistance, heat resistance, anti-seizing properties, etc. are required. Therefore, these mechanical parts are coated with wear resistance such as DLC (Diamond-Like-Carbon) using plasma chemical vapor deposition. [0003] In addition, when performing the plasma chemical vapor deposition method on the above-mentioned substrates, it is desirable to accommodate a large number of substrates in a vacuum chamber and process them at one time in consideration of productivity. When a large number of substrates are processed at one time in this way, it is necessary to make the thickness...

AI Technical Summary

Problems solved by technology

As a result, there is a problem that thickly attached deposits are scattered

In addition, when the formed film has insulating properties, even if the film is on the chamber side, since it exists in the part where power flows, the resistance of the inner wall of the chamber increases.

Therefore, the generation of plasma using the inner wall as one electrode becomes unstable, and there is a possibility that the operating conditions may deviate from the optimum conditions.

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