Etching solution composition for copper layer and titanium layer and method of preparing array substrate for liquid crystal display using the same
A composition and etchant technology, applied in the directions of instruments, optics, nonlinear optics, etc., can solve the problems of glass substrate and silicon layer damage, unoptimized application, poor etching profile, etc., to reduce the degree of heat generation and improve Productivity, effects of excellent etching properties
Active Publication Date: 2015-09-16
DONGWOO FINE CHEM CO LTD
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Problems solved by technology
In this case, however, the etch profile is poor and post-processing is difficult
In particular, fluoride ions (F - ) can cause damage to glass substrates and silicon layers, therefore, it is not preferred for practical processing
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[0091] An etchant composition (unit: wt.%) was prepared by using the constituent components listed in Table 1 below.
[0092] [Table 1]
[0093]
[0094]
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Abstract
The invention discloses an etching solution composition for a copper layer and a titanium layer and a method of preparing an array substrate for a liquid crystal display using the same. The etching solution composition comprises persulphate and sulfosalicylic acid, so that the multiple metallic layers including copper layers and titanium layers can be uniformly etched in at a high speed in an environmental-friendly way. Excellent thermal control performance and time stability are ensured.
Description
technical field [0001] The invention relates to an etchant composition for a copper layer and a titanium layer, and a method for manufacturing an array substrate of a liquid crystal display using the etchant composition. Background technique [0002] A representative electronic circuit for driving semiconductor devices and flat panel displays is a thin film transistor (TFT). A method of manufacturing a TFT-LCD generally includes forming a metal layer on a substrate as a wire material for a gate electrode and a source / drain electrode, forming a photoresist on a selected area of the metal layer, and then using The photoresist acts as a mask to etch the metal layer. [0003] Conventionally, as the wiring material of the gate electrode and the source / drain electrodes, metal layers in which aluminum or its alloy and other metals are sequentially laminated have been used. Aluminum is cheaper and has low electrical resistance, but has poor chemical resistance and can cause prob...
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IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/44G02F1/136286G02F1/136295
Inventor 刘仁浩鞠仁说
Owner DONGWOO FINE CHEM CO LTD
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