Display substrate, manufacturing method thereof and display device

Abstract

The invention provides a display substrate, a manufacturing method thereof and a display device and belongs to the display technical field. The manufacturing method of the display substrate includes the following steps that: a plurality of thin film transistors are formed; a lattice matching layer used for aluminum nitride deposition is formed on a substrate; an aluminum nitride layer is deposited on the lattice matching layer through a low-temperature pulse magnetron sputtering mode; and GaN light emitting diodes containing an n type gallium nitride layer, a quantum well multilayer and a p type gallium nitride layer are formed on the aluminum nitride layer, wherein the light emitting diodes are in one-to-one correspondence with the thin film transistors. With the above technical schemes of the invention adopted, a GaN LED can be prepared on a large-sized substrate.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] Existing GaN LEDs (Light Emitting Diodes) are fabricated on atomically flat silicon substrates or sapphire substrates based on epitaxial growth or chemical vapor deposition. However, this manufacturing method has the following defects: 1. The silicon substrate or the sapphire substrate is expensive; 2. The silicon substrate or the sapphire substrate is small in size. The above-mentioned defects limit the size and cost of displays using GaN LEDs. How to fabricate GaN LEDs on cheap, large-area substrates (such as glass substrates) has become an urgent problem to be solved. [0003] Since epitaxial growth or chemical vapor deposition of nitride needs to be carried out at a high temperature of about 1000 degrees Celsius, and this level of high temperature will affect th...

AI Technical Summary

Problems solved by technology

However, this manufacturing method has the following defects: 1. The silicon substrate or sapphire substrate is expensive; 2. The size of the silicon substrate or sapphire substrate is small

[0003] Since epitaxial growth or chemical vapor deposition of nitride needs to be carried out at a high temperature of about 1000 degrees Celsius, and this level of high temperature will affect the performance of the glass substrate, it is impossible to use epitaxial growth or chemical vapor deposition of nitride on the glass substrate. Preparation of GaN LEDs

In order to prepare GaN LEDs on large-sized substrates, the existing technology attempts to use DC magnetron sputtering to form the nitride layer required for GaN LEDs on large-sized substrates, but the results are not satisfactory. The main problem is that the sputtering method is difficult. Formation of high quality single crystal nitride

In order to form high-quality single-crystal nitrides, a thin film with a crystal structure similar to that of the deposited nitrides can be formed on the substrate as the substrate. The commonly used substrate materials are AlN, ZnO, Al 2 o 3 etc., but it is easier to deposit substrates on silicon substrates or sapphire substrates, but it is difficult to deposit high-quality substrates on glass substrates

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