A Particle Precision Controller Based on Two-dimensional Photonic Crystal
A two-dimensional photonic crystal and controller technology, applied in light guides, optics, instruments, etc., can solve the problems of increasing the price and complexity of instruments and equipment, and achieve the effects of improving light manipulation efficiency, increasing optical field density, and reducing costs
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Embodiment 1
[0040] figure 2 A block diagram of an embodiment of the present invention is shown. A substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer 2 is 3 μm, and the thickness of the upper silicon plate 3 is 220 nm. Using electron beam exposure and dry etching, etc., a defect width of 0.8W0, a groove width of 100nm, and a period length of 450nm were produced on the silicon plate 3. The aperture of the air hole was reduced from 125nm to 120nm along the direction of the defect, and the total length was 18. Micron two-dimensional silicon photonic crystal waveguide 4 and continuous waveguide 5 . Then, the metal titanium-aluminum electrode 6 and the dielectric covering layer 7 are prepared sequentially by means of photolithography, evaporation and wet stripping.
[0041] In a vacuum environment, the control light field is introduced by the continuous waveguide 5, and the free particles near the two-dimensional silicon photon...
Embodiment 2
[0043] figure 2 A block diagram of an embodiment of the present invention is shown. A substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer 2 is 3 μm, and the thickness of the upper silicon plate 3 is 220 nm. Using electron beam exposure and dry etching, etc., the defect width is 0.8W0, the groove width is 100nm, the hole diameter is 120nm, and the period length increases from 445nm to 450nm along the defect direction, with a total length of 18 microns. The two-dimensional silicon photonic crystal waveguide 4 and the continuous waveguide 5. Then, the metal titanium-aluminum electrode 6 and the dielectric covering layer 7 are prepared sequentially by means of photolithography, evaporation and wet stripping.
[0044] In a vacuum environment, the control light field is introduced by the continuous waveguide 5, and the free particles near the two-dimensional silicon photonic crystal waveguide 4 will be localized in t...
Embodiment 3
[0046] figure 2 A block diagram of an embodiment of the present invention is shown. A substrate wafer composed of silicon-silicon dioxide-silicon is selected, in which the thickness of the silicon dioxide layer 2 is 3 μm, and the thickness of the upper silicon plate 3 is 220 nm. Electron beam exposure and dry etching are used to produce defects with a width of W0 on the silicon plate 3, the groove width decreases from 120nm to 110nm along the single groove from the incident direction, the period length is 450nm, the small hole diameter is 130nm, and the total length A 20-micron two-dimensional silicon photonic crystal waveguide 4 and a continuous waveguide 5 . Then, the metal titanium-aluminum electrode 6 is prepared sequentially by means of photolithography, vapor deposition and wet stripping.
[0047] In a vacuum environment, the control light field is introduced by the continuous waveguide 5, and the free particles near the two-dimensional silicon photonic crystal wavegu...
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Abstract
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