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Image sensor and manufacturing method thereof

A technology of image sensor and manufacturing method, which is applied in the direction of radiation control devices, etc., and can solve problems such as small light intensity range

Active Publication Date: 2018-09-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of this application is to provide an image sensor and its manufacturing method to solve the problem in the prior art that the range of light intensity that the image sensor can receive is small

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Embodiment Construction

[0038] Embodiments of the application are described in detail below, but the application can be practiced in many different ways as defined and covered by the claims.

[0039] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof. For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe the The spatial positional relationship between one device or feature shown and other devices or feature...

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Abstract

The invention provides an image sensor and a manufacturing method thereof. The image sensor comprises a substrate. The substrate comprises a plurality of active regions and isolating structures which are used for isolating the plurality of active regions. Each active region comprises a photoelectric sensing region and a transmission control region. Each photoelectric sensing region comprises a first doped region and a second doped region which are used for forming a photoelectric sensing structure, wherein the doping types of the first doped region and the second doped region are opposite. The first doped region and / or the second doped region have comb-teeth-shaped structures. According to the image sensor and the manufacturing method, the first doped region and / or the second doped region have the comb-teeth-shaped structures, and therefore the capacitance of a photoelectric diode is increased in a limited size / area. Because the capacitance of the photoelectric diode is increased, light with higher strength can be reduced and saturation is prevented. Therefore, the receivable light strength range of the image sensor with the structure of the invention is larger than that of the image sensor in prior art.

Description

technical field [0001] The present application relates to the field of image acquisition devices, and more specifically, to an image sensor and a manufacturing method thereof. Background technique [0002] A complementary metal oxide (CMOS) image sensor (image sensor) chip is a semiconductor device that converts optical signals into electrical signals. In recent years, due to many advantages in circuit integration, energy consumption and manufacturing costs, CMOS image sensors have gained developed rapidly. [0003] CMOS image sensor includes a series of pixel units (pixel cells) and peripheral circuits (peripherycircuit), each pixel unit includes a light-emitting diode and at least one MOS transistor, so that each unit pixel is detected by the MOS transistor in the light-on mode The light-emitting diode is used to absorb the incident light energy and convert the light energy into photocurrent. [0004] figure 1 A schematic structural diagram of an image sensor in the pri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 蒲月皎吴永皓
Owner SEMICON MFG INT (SHANGHAI) CORP
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